{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STFH18N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STFH18N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STFH18N60M2","factsUrl":"https://icboms.com/api/mcp/products/STFH18N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh N-Channel MOSFET, STFH18N60M2, 600 V Vdss, 13 A Id, 280 mOhm Rds(on) at 10 V, TO-220-3 Full Pack through hole.","salesMarkdown":"Total gate charge is 21.5 nC at 10 V, which is modest for a 600 V, 13 A device. A typical gate driver sourcing 1 A can switch the gate in about 22 ns, keeping crossover losses manageable in a 100 kHz SMPS. The input capacitance is 791 pF at 100 V drain bias, so the driver sees a capacitive load that rises at lower Vds — account for that in the gate resistor selection to avoid ringing. ## Temperature range and package — design-in checklist The through-hole mounting suits point-to-point wiring on a perfboard or a PCB with drilled holes; the 0.50 mm pitch of the leads is standard for a TO-220 footprint. ## Lifecycle and supply — active, no LTB risk It is ROHS3 compliant.","metaTitle":"STMicroelectronics STFH18N60M2 N-Channel 600 V MOSFET, 13 A","metaDescription":"STFH18N60M2 N-channel 600 V MOSFET, 13 A continuous drain, 280 mOhm Rds(on) at 10 V. MDmesh technology. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STFH18","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 6.5A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"21.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"791 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"13A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.2900","priceTiers":[{"qty":1,"price":"$2.50000","currency":"USD"},{"qty":10,"price":"$2.24700","currency":"USD"},{"qty":100,"price":"$1.80600","currency":"USD"},{"qty":500,"price":"$1.48382","currency":"USD"},{"qty":1000,"price":"$1.39982","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ec58444d892c32eb2e77e762a3600577.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STFH18N60M2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of the STFH18N60M2?","answer":"This is the figure to use for worst-case conduction loss at 25 °C junction; the actual Rds(on) increases with temperature per the normalised curve in the datasheet."},{"question":"What is the replacement for the STFH18N60M2?","answer":"No official replacement or pin-compatible alternate is listed in the manufacturer cross-reference. For a parametric match, look for a 600 V N-channel MOSFET in a TO-220FP package with Rds(on) near 280 mOhm and gate charge around 21.5 nC — other MDmesh M2 series parts from ST may fit the same footprint."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STFH18N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STFH18N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}