{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF9NM50N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF9NM50N","canonicalUrl":"https://icboms.com/stmicroelectronics/STF9NM50N","factsUrl":"https://icboms.com/api/mcp/products/STF9NM50N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF9NM50N, MDmesh™ N-Channel MOSFET, 500 V drain-source, 5 A continuous, 560 mOhm Rds(on) at 10 V, 20 nC gate charge, TO-220-3 Full Pack through-hole, 150°C junction temperature.","salesMarkdown":"The 20 nC typical gate charge keeps switching losses manageable in hard-switched topologies like flyback and forward converters, PFC stages, and auxiliary power supplies in industrial and consumer off-line equipment. STMicroelectronics lists the STF9NM50N as Obsolete. The 500 V Vdss rating gives enough headroom for 240 VAC offline rectified rails (≈340 VDC) plus switching overshoot, but the 5 A continuous current is derated by the 25 W power dissipation ceiling at Tc=25°C. In a real enclosure with a heatsink at 70°C ambient, the usable current drops further — thermal design must be checked against the SOA curve. The 560 mOhm Rds(on) at 10 V drive means conduction loss at 3.7 A is about 7.7 W, which consumes nearly a third of the package's dissipation budget. The 20 nC gate charge is modest; a standard gate driver with 1 A peak source can switch it in the 50–100 kHz range without excessive drive loss.","metaTitle":"STF9NM50N N-Channel MOSFET, 500 V, 5 A, TO-220FP, Obsolete","metaDescription":"STF9NM50N MDmesh N-channel MOSFET, 500 Vdss, 5 A continuous, 560 mOhm Rds(on). TO-220 Full Pack through-hole.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF9","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"560mOhm @ 3.7A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"570 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.9100","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b7a797cf4af7d23d402b94ad8a4295b0.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Does STF9NM50N have a through-hole package?","answer":"Yes, it is supplied in a TO-220-3 Full Pack (TO-220FP) through-hole package, with the mounting tab fully isolated from the die."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF9NM50N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF9NM50N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}