{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF8NM60ND","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF8NM60ND","canonicalUrl":"https://icboms.com/stmicroelectronics/STF8NM60ND","factsUrl":"https://icboms.com/api/mcp/products/STF8NM60ND","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ II series, N-Channel MOSFET, 600 V drain-source, 7 A continuous drain, 700 mOhm Rds(on) at 10 V, TO-220-3 Full Pack through-hole, 25 W power dissipation.","salesMarkdown":"## 600 V N-channel in a fully isolated TO-220FP The STMicroelectronics STF8NM60ND is a 600 V N-channel power MOSFET from the FDmesh™ II series, built with a planar stripe layout that balances on-resistance and switching speed for offline power conversion. The TO-220FP full-pack package provides full isolation from the heatsink — no insulating pad or washer needed, which simplifies assembly and improves thermal coupling in high-voltage supplies. With a maximum Rds(on) of 700 mOhm at 10 V and 3.5 A, conduction loss at full load stays under 3.5 W (I²R) — manageable in the TO-220FP's 25 W dissipation ceiling. Input capacitance is 560 pF at 50 V drain-source, which means the gate drive sees a light capacitive load — a standard 1 A gate driver can switch it cleanly without excessive cross-conduction. For dual-sourcing or a pin-compatible alternate within the same FDmesh™ II family, check the STF8NM60N (non-ND suffix) — the ND variant typically includes tighter parametric limits, but verify the exact Rds(on) and gate charge against your BOM requirements.","metaTitle":"STF8NM60ND MOSFET, 600V N-Channel, 700mOhm, TO-220FP","metaDescription":"STMicroelectronics STF8NM60ND N-channel 600V MOSFET, 7A continuous, 700mOhm Rds(on) at 10V, TO-220FP full-pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STF8","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"700mOhm @ 3.5A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"22 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"560 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF8NM60ND/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) max of STF8NM60ND at 10V?","answer":"The maximum on-resistance is 700 mOhm at 10 V gate drive with 3.5 A drain current. This is the figure to use for worst-case conduction loss calculations in your thermal model."},{"question":"What package and mounting type does STF8NM60ND use?","answer":"It comes in a TO-220-3 Full Pack (TO-220FP) through-hole package. The full-pack construction provides electrical isolation between the mounting tab and the die, so no insulating washer is required when bolting to a heatsink."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF8NM60ND","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF8NM60ND when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}