{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF8N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF8N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STF8N65M5","factsUrl":"https://icboms.com/api/mcp/products/STF8N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF8N65M5, N-Channel MOSFET, MDmesh™ V, 650 V Vdss, 7 A Id, 600 mOhm Rds(on) @ 10 V, 15 nC Qg, TO-220FP, Through Hole.","salesMarkdown":"## 650 V N-channel in a full-pack TO-220 Gate charge is 15 nC at 10 V, which means the driver sees a light reactive load and switching edges stay clean with modest gate drive current. At lower gate voltages the on-resistance rises — the 5 V gate threshold maximum means the device is not fully enhanced below about 6 V, so a 10 V drive rail is the intended operating point. The 15 nC total gate charge at 10 V is light enough that a standard MOSFET driver with 1 A peak output can switch the gate in tens of nanoseconds; the input capacitance of 690 pF at 100 V Vds confirms the gate capacitance is modest, which helps keep the Miller plateau short and the switching losses contained in hard-switched topologies like PFC boost or flyback converters. Maximum power dissipation is 25 W at case temperature, so a heatsink is required for any continuous load above a few watts. For dual-sourcing or alternate-pin considerations, the base product number STF8 indicates a family of 650 V N-channel devices in the TO-220FP package — the same footprint accepts other current and Rds(on) variants within the series, though each should be qualified against the specific BOM requirements.","metaTitle":"STF8N65M5 N-Channel MOSFET, 650 V, 7 A, MDmesh V","metaDescription":"STF8N65M5 N-Channel MOSFET from STMicroelectronics MDmesh V series. 650 V Vdss, 7 A Id, 600 mOhm Rds(on) at 10 V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STF8","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 3.5A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"15 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"690 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.9200","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/e680c7604ea02fb6b51fc3c50e27e091.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the STF8N65M5?","answer":"The maximum on-resistance is 600 mOhm at 3.5 A drain current with 10 V gate drive. This is the figure to use for conduction loss calculations at the rated operating point."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF8N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF8N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}