{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF8N60DM2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF8N60DM2","canonicalUrl":"https://icboms.com/stmicroelectronics/STF8N60DM2","factsUrl":"https://icboms.com/api/mcp/products/STF8N60DM2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF8N60DM2, MDmesh™ DM2 series N-Channel MOSFET, 600V Vdss, 8A Id, 600mOhm Rds(on) @ 4A 10V, TO-220-3 Full Pack, Through Hole, -55°C ~ 150°C junction.","salesMarkdown":"## 600 V N-channel MOSFET in TO-220 Full Pack — MDmesh DM2 ## On-resistance and gate charge — switching loss budget The drive voltage range is 10 V for both the max and min Rds(on) — this part is not optimized for 5 V logic-level drive, so budget a 10 V gate supply or a bootstrap rail. Total gate charge (Qg) is 13.5 nC at 10 V, and input capacitance (Ciss) is 449 pF at 100 V drain-source. Those numbers keep switching losses manageable in hard-switched topologies running at 50–150 kHz, which is the typical sweet spot for this class of device. ## Junction temperature and power dissipation Maximum power dissipation is 25 W at the case (Tc). The TO-220 Full Pack's isolation adds thermal resistance compared to a standard TO-220 — a heatsink is practically required above a few watts of continuous dissipation. The 150°C junction ceiling is the real limit; derate power linearly above 25°C case temperature per the datasheet curve.","metaTitle":"ST STF8N60DM2 N-Channel MOSFET, 600V 8A TO-220FP","metaDescription":"STMicroelectronics STF8N60DM2 N-channel MDmesh DM2 MOSFET. 600V Vdss, 8A Id, 600mOhm Rds(on), TO-220 Full Pack. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ DM2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STF8","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 4A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FPAB","Gate Charge (Qg) (Max) @ Vgs":"13.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"449 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.7542","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What is the Vds rating of STF8N60DM2?","answer":"The drain-to-source voltage (Vdss) is rated at 600 V. This is the maximum voltage the MOSFET can block in the off state."},{"question":"Does STF8N60DM2 require a heatsink?","answer":"The maximum power dissipation is 25 W at the case temperature. The TO-220 Full Pack package has an isolated tab, which simplifies mounting, but at any significant power level a heatsink is necessary to keep the junction temperature within the -55°C to 150°C operating range."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF8N60DM2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF8N60DM2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}