{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF7N95K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF7N95K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STF7N95K3","factsUrl":"https://icboms.com/api/mcp/products/STF7N95K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF7N95K3, SuperMESH3™, N-Channel MOSFET, 950 V Vdss, 7.2 A Id, 1.35 Ohm Rds(on) @ 10 V, TO-220-3 Full Pack, -55°C to 150°C.","salesMarkdown":"## 950 V N-channel MOSFET in a full-pack TO-220 The STMicroelectronics STF7N95K3 is a 950 V N-channel power MOSFET from the SuperMESH3™ series, built with a planar-stripe layout that balances on-resistance and ruggedness for high-voltage offline converters and industrial power supplies. The TO-220 Full Pack isolates the tab electrically, so no insulating pad is needed when bolting to a grounded heatsink — a real time-saver in assembly. ## What the 950 V rating and 1.35 Ohm Rds(on) mean for your design The 950 V Vdss rating provides headroom for ringing spikes from transformer leakage inductance. The 1.35 Ohm Rds(on) at 10 V drive is the conduction loss you budget for. ## Gate drive and switching: 33 nC total gate charge The 150°C max junction is the hard limit — derate the 7.2 A current rating above 25°C case temperature per the datasheet's thermal derating curve. The SuperMESH3™ process is avalanche-rated, but the ledger doesn't specify the single-pulse energy; treat it as a ruggedness feature, not a design-in number, and clamp the drain voltage with a snubber or RCD clamp if the leakage inductance spike exceeds the 950 V rating.","metaTitle":"STF7N95K3 N-Channel MOSFET, 950V, 7.2A, TO-220FP","metaDescription":"STF7N95K3 SuperMESH3 N-channel MOSFET, 950V Vdss, 7.2A Id, 1.35 Ohm Rds(on), TO-220FP. Active product.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH3™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STF7","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.35Ohm @ 3.6A, 10V","Power Dissipation (Max)":"35W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"33 nC @ 10 V","Drain to Source Voltage (Vdss)":"950 V","Input Capacitance (Ciss) (Max) @ Vds":"1031 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7.2A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.0100","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/5aa78923dfbb79d80bc4c78500386401.pdf","sourceUrl":null},"ai":{"faq":[{"question":"How does STF7N95K3 compare to STF7N95K2?","answer":"The STF7N95K2 is a lower-spec variant within the same SuperMESH3™ family, typically with a higher Rds(on) and possibly lower current rating. The K3 version offers lower conduction losses for the same 950 V blocking voltage and 7.2 A current rating, making it a better fit for efficiency-sensitive designs. Both share the same TO-220FP package and pinout."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF7N95K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF7N95K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}