{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF7N65M6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF7N65M6","canonicalUrl":"https://icboms.com/stmicroelectronics/STF7N65M6","factsUrl":"https://icboms.com/api/mcp/products/STF7N65M6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF7N65M6, N-Channel MOSFET, MDmesh™ M6 series, 650 V Vdss, 5 A continuous drain, 990 mOhm Rds(on) at 10 V, 6.9 nC gate charge, TO-220-3 Full Pack, -55 to 150 °C.","salesMarkdown":"## 650 V, 5 A N-channel in a fully isolated TO-220FP The STMicroelectronics STF7N65M6 is a 650 V, 5 A N-channel power MOSFET built on the MDmesh™ M6 technology platform. It is aimed at high-voltage switching applications such as flyback converters, offline power supplies, and LED lighting drivers where the fully isolated TO-220FP package simplifies heatsinking and eliminates the need for an insulating pad. The 6.9 nC typical gate charge keeps switching losses low, making this part suitable for frequencies up to the low hundreds of kilohertz in resonant or quasi-resonant topologies. ## Temperature range and package thermal limits Maximum power dissipation is 20 W at the case, limited by the TO-220FP's full-mold construction — the package itself is the insulator, so derating must follow the case temperature curve, not ambient.","metaTitle":"STF7N65M6 N-Channel MOSFET, 650 V, 5 A, TO-220FP","metaDescription":"STF7N65M6 from STMicroelectronics MDmesh M6 series: 650 Vdss, 5 A, 990 mOhm Rds(on), 6.9 nC gate charge, -55 to 150°C. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M6","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.75V @ 250µA","Base Product Number":"STF7","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"990mOhm @ 2.5A, 10V","Power Dissipation (Max)":"20W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"6.9 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"220 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.8439","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What is the Vgs(th) of the STF7N65M6?","answer":"Maximum gate threshold voltage is 3.75 V at 250 µA drain current."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF7N65M6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF7N65M6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}