{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF7N52K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF7N52K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STF7N52K3","factsUrl":"https://icboms.com/api/mcp/products/STF7N52K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH3™ N-Channel MOSFET, STF7N52K3, 525 Vdss, 6 A continuous drain, 850 mOhm Rds(on) at 3 A, 10 V, TO-220FP through-hole package, 150°C junction temperature.","salesMarkdown":"## 525 V N-channel in a TO-220FP — what it does The STF7N52K3: The fully isolated TO-220FP package eliminates the need for a mounting pad or insulator — the tab is electrically isolated, so the screw-down point can share a heatsink with other devices without a separate isolation washer. ## Gate charge and switching — 33 nC at 10 V Total gate charge is 33 nC at a 10 V drive. The input capacitance is 870 pF at 100 V drain-source. The STF7N52K3 is listed as obsolete. ## Thermal budget — 25 W in a TO-220FP Maximum power dissipation is 25 W at case temperature, but the TO-220FP has a higher thermal resistance than the standard TO-220 because the plastic encapsulation adds a thermal barrier between the die and the heatsink. In practice, for continuous operation at 6 A, the conduction loss alone (I² × Rds(on) at temperature) will eat a large fraction of that 25 W budget — expect to derate the current significantly unless the case is held near 25°C with forced cooling. The 150°C maximum junction temperature is the hard limit; the Rds(on) roughly doubles from 25°C to 150°C, so the thermal loop needs to be calculated at the hot junction, not the 25°C datasheet number.","metaTitle":"STF7N52K3 N-Channel MOSFET, 525 V, 6 A, TO-220FP, Obsolete","metaDescription":"STF7N52K3 N-Channel MOSFET, 525 Vdss, 6 A continuous drain, 850 mOhm Rds(on), TO-220FP. Check stock and pricing.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH3™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STF7N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"850mOhm @ 3A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"33 nC @ 10 V","Drain to Source Voltage (Vdss)":"525 V","Input Capacitance (Ciss) (Max) @ Vds":"870 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7500","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7e6032c8d40fcc1cdcf27c9843287971.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can STF7N52K3 be used in a 500 V application?","answer":"Yes. The drain-source breakdown voltage is 525 V, providing 25 V of headroom above a 500 V rail. This is adequate for a 500 V DC bus in a power supply, but the derating margin depends on the switching overshoot — keep the peak drain voltage below 525 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF7N52K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF7N52K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}