{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF6N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF6N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STF6N60M2","factsUrl":"https://icboms.com/api/mcp/products/STF6N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II Plus, N-Channel MOSFET, 600 V Vdss, 4.5 A Id, 1.2 Ohm Rds(on) at 2.25 A, 10 V, 8 nC Qg, TO-220-3 Full Pack (TO-220FP), -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V N-channel MOSFET — MDmesh II Plus STF6N60M2 N-channel MOSFET in a TO-220 Full Pack (TO-220FP) through-hole package, rated 600 V Vdss. ## Conduction and switching — 1.2 Ohm Rds(on), 8 nC Qg Maximum on-resistance is 1.2 Ohm at 2.25 A drain current with 10 V gate drive — the conduction loss floor for the load current. Total gate charge is 8 nC at 10 V, a light load on the gate driver that keeps switching losses manageable at moderate frequencies. Input capacitance is 232 pF at 100 V drain-to-source, contributing to a low Miller plateau charge and fast switching edges. ## Temperature range and power dissipation","metaTitle":"STF6N60M2 N-Channel MOSFET, 600 V, 4.5 A, TO-220FP","metaDescription":"STF6N60M2 N-channel MOSFET from STMicroelectronics MDmesh II Plus series. 600 V Vdss, 4.5 A Id, 1.2 Ohm Rds(on), 8 nC Qg. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF6","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.2Ohm @ 2.25A, 10V","Power Dissipation (Max)":"20W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"8 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"232 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4.5A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6100","priceTiers":[{"qty":1,"price":"$1.68000","currency":"USD"},{"qty":10,"price":"$1.50600","currency":"USD"},{"qty":100,"price":"$1.17410","currency":"USD"},{"qty":500,"price":"$0.96994","currency":"USD"},{"qty":1000,"price":"$0.84280","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/cdb491530e286c502284b33df1741aac.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF6N60M2/alternatives.json"},"ai":{"faq":[{"question":"What is the gate charge of the STF6N60M2 and why does it matter?","answer":"Total gate charge is 8 nC at 10 V. This low Qg means the gate driver does not need to supply large peak currents, keeping switching losses low and simplifying driver selection for moderate-frequency converters."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF6N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF6N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}