{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF5N105K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF5N105K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STF5N105K5","factsUrl":"https://icboms.com/api/mcp/products/STF5N105K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ series N-channel MOSFET, STF5N105K5, 1050 V drain-source voltage, 3 A continuous drain current, 3.5 Ohm on-resistance at 10 V gate drive, TO-220 Full Pack through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 1050 V N-channel MOSFET in a fully isolated TO-220 Full Pack Its 1050 V drain-to-source voltage rating makes it suited for offline power supplies, flyback converters, and PFC stages where the DC bus sits at 400 V or higher and needs margin for line transients. This simplifies assembly and improves thermal coupling in designs where the heatsink is at chassis potential. The package is through-hole, so it suits point-to-point wiring or PCB layouts where wave-solder assembly is the process. This is not a commercial-temperature part; it is chosen when the system has to survive cold soak and hot engine-bay conditions alike. ## Gate drive and switching considerations The drive voltage for achieving the rated on-resistance is 10 V; the maximum gate-source voltage is ±30 V. The threshold voltage maximum is 5 V at 100 µA drain current, so the device is not a logic-level MOSFET. Input capacitance is 210 pF typical at 100 V drain-source, which is low and eases the drive burden for the upstream gate driver. The TO-220 Full Pack's metal tab is electrically isolated, so the heatsink can be shared with other isolated devices without risk of shorting the drain.","metaTitle":"STF5N105K5 N-Channel MOSFET, 1050 V, 3 A, TO-220 Full Pack","metaDescription":"STF5N105K5 N-channel MOSFET from STMicroelectronics MDmesh series. 1050 V drain-source, 3 A continuous drain, 3.5 Ohm Rds(on).","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STF5N105","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"3.5Ohm @ 1.5A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220 Full Pack","Gate Charge (Qg) (Max) @ Vgs":"12.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"1050 V","Input Capacitance (Ciss) (Max) @ Vds":"210 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.9100","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/bd042dbec9e2c6aa5da91b8c11c5457f.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF5N105K5/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF5N105K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF5N105K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}