{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF4LN80K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF4LN80K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STF4LN80K5","factsUrl":"https://icboms.com/api/mcp/products/STF4LN80K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF4LN80K5, N-channel MOSFET, MDmesh K5 series, 800 V Vdss, 3 A Id, 2.6 Ohm Rds(on) at 1 A, 10 V, 3.7 nC gate charge, TO-220FP through-hole package, -55 to 150 °C junction.","salesMarkdown":"## 800 V N-channel MOSFET — MDmesh K5 series The STF4LN80K5: It is built on ST's MDmesh vertical structure, which reduces on-resistance per unit area compared to planar MOSFETs of the same voltage class. The device targets offline flyback converters, auxiliary power supplies, and LED drivers where low gate charge and fast switching are needed. ## Conduction and switching parametrics Gate charge totals 3.7 nC at 10 V, and input capacitance is 122 pF at 100 V drain-source — both low enough that a simple gate-drive IC or even a logic-level output can switch the device at moderate frequencies without excessive drive loss. Gate threshold voltage is specified at 5 V maximum with 100 µA drain current, so the device needs a gate drive above 5 V to fully enhance; the recommended drive voltage is 10 V for the rated Rds(on). Through-hole mounting (TO-220) suits point-to-point wiring on perfboard or PCB through-hole layouts.","metaTitle":"STF4LN80K5 N-Channel MOSFET, 800 V, 3 A, MDmesh K5","metaDescription":"STF4LN80K5 N-channel MOSFET from STMicroelectronics MDmesh K5 series. 800 V Vdss, 3 A Id, 2.6 Ohm Rds(on), 3.7 nC gate charge. TO-220FP isolated package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ K5","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STF4LN80","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"2.6Ohm @ 1A, 10V","Power Dissipation (Max)":"20W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"3.7 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"122 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/c7eef405c4b9512cbb92cea6ad129d17.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF4LN80K5/alternatives.json"},"ai":{"faq":[{"question":"Where can I buy STF4LN80K5?","answer":"Submit an RFQ for current availability and pricing — no stock-holding claim is made here."},{"question":"What is the Vgs(th) of STF4LN80K5?","answer":"Maximum gate threshold voltage is 5 V at 100 µA drain current. The device requires a gate drive above 5 V to fully turn on; 10 V is the recommended drive for the rated on-resistance."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF4LN80K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF4LN80K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}