{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF42N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF42N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STF42N65M5","factsUrl":"https://icboms.com/api/mcp/products/STF42N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh V N-Channel MOSFET, 650 V drain-source, 33 A continuous drain, 79 mOhm Rds(on) at 10 V gate drive, 100 nC gate charge, TO-220FP full-pack through-hole package, active production.","salesMarkdown":"STMicroelectronics lists the STF42N65M5 as Active. ## Package and thermal considerations The TO-220FP (full-pack) package is a through-hole, fully isolated tab — no mica washer or silicone pad between the device and the heatsink. The maximum junction temperature is 150°C, and the case-limited power dissipation is 40 W. For continuous operation near the 33 A rating, a heatsink with adequate thermal interface is required; the full-pack's junction-to-case thermal resistance is higher than a standard TO-220, so derate accordingly. The ±25 V maximum gate-source voltage is typical for this class; a 10 V gate drive is specified for the rated Rds(on).","metaTitle":"STF42N65M5 N-Channel MOSFET, 650 V, 33 A, MDmesh V, TO-220FP","metaDescription":"STF42N65M5 N-channel 650 V, 33 A MOSFET from STMicroelectronics MDmesh V series. 79 mOhm Rds(on), 100 nC gate charge. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STF42","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"79mOhm @ 16.5A, 10V","Power Dissipation (Max)":"40W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"100 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"4650 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"33A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.9115","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/36fbf4b72e1a896fee1cd768480adeda.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF42N65M5/alternatives.json"},"ai":{"faq":[{"question":"What is the difference between STF42N65M5 and STB42N65M5?","answer":"The STF42N65M5 uses the TO-220FP full-pack (fully isolated) package, while the STB42N65M5 uses the D2PAK surface-mount package. The die and electrical ratings (650 V, 33 A, 79 mOhm) are the same. The TO-220FP is preferred for through-hole assembly with direct-to-heatsink mounting; the D2PAK suits reflow-soldered, high-volume production."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF42N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF42N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}