{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF3NK100Z","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF3NK100Z","canonicalUrl":"https://icboms.com/stmicroelectronics/STF3NK100Z","factsUrl":"https://icboms.com/api/mcp/products/STF3NK100Z","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH™ N-Channel MOSFET, STF3NK100Z, 1000 V Vdss, 2.5 A Id, 6 Ohm Rds(on) @ 1.25 A, 10 V, TO-220-3 Full Pack (TO-220FP), Through Hole, -55°C to 150°C TJ.","salesMarkdown":"## What this 1 kV MOSFET brings to the board The TO-220FP full-pack package isolates the tab electrically — no insulating pad needed against the heatsink, which saves assembly time in through-hole designs. That keeps the driver's switching losses low and allows the part to be driven from a standard PWM controller without a separate gate-driver IC in many cases. For a 100 kHz flyback, this part switches cleanly without excessive ringing if the layout keeps the gate loop short. ## Lifecycle and sourcing — still a current part For a high-voltage MOSFET that fills a specific niche (1 kV in an isolated full-pack), having an active lifecycle removes the usual sourcing anxiety.","metaTitle":"STF3NK100Z N-Ch MOSFET, 1000 V, 2.5 A, TO-220FP","metaDescription":"STMicroelectronics STF3NK100Z SuperMESH N-channel MOSFET, 1000 Vdss, 2.5 A Id, 6 Ohm Rds(on), TO-220FP. Active product.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STF3NK100","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"6Ohm @ 1.25A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"18 nC @ 10 V","Drain to Source Voltage (Vdss)":"1000 V","Input Capacitance (Ciss) (Max) @ Vds":"601 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.9300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9b0b88de450d7409fb8e543bde8d8162.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF3NK100Z/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STF3NK100Z?","answer":"The maximum on-resistance is 6 Ohms at a drain current of 1.25 A with a 10 V gate-to-source voltage. This is the figure to use for conduction loss calculations in a switching power supply."},{"question":"STF3NK100Z vs STF3NK80Z: what's the difference?","answer":"The STF3NK100Z is rated for 1000 V drain-source voltage, while the STF3NK80Z is an 800 V part. Both are N-channel SuperMESH MOSFETs in the same TO-220FP package with similar current and on-resistance ratings. The 1000 V version gives extra voltage headroom for designs with high-voltage transients or where the input rail exceeds 600 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF3NK100Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF3NK100Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}