{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF36N60M6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF36N60M6","canonicalUrl":"https://icboms.com/stmicroelectronics/STF36N60M6","factsUrl":"https://icboms.com/api/mcp/products/STF36N60M6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF36N60M6, MDmesh M6 N-Channel MOSFET, 600 Vdss, 30 A Id, 99 mOhm Rds(on) at 15 A, 10 V gate drive, 44.3 nC Qg, TO-220 Full Pack (TO-220FP).","salesMarkdown":"## 600 V, 30 A N-channel in a TO-220FP — the full-pack isolation angle ## 99 mOhm on-resistance — conduction loss at 15 A Rds(on) is 99 mOhm at 15 A, 10 V. The TO-220FP package is rated for 40 W dissipation. Total gate charge is 44.3 nC at 10 V. Input capacitance is 1960 pF at 100 V drain-source.","metaTitle":"STF36N60M6 N-Channel MOSFET, 600 V, 30 A, MDmesh M6","metaDescription":"STF36N60M6 N-channel 600 V MOSFET, 30 A continuous drain, 99 mOhm Rds(on), TO-220FP. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M6","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Base Product Number":"STF36","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"99mOhm @ 15A, 10V","Power Dissipation (Max)":"40W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"44.3 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1960 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"30A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.4425","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/5070408dee7647515dc60e9b442ccd1c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF36N60M6/alternatives.json"},"ai":{"faq":[{"question":"What is the difference between STF36N60M6 and STF36N60M2?","answer":"Both are 600 V N-channel MOSFETs in the MDmesh family, but the M6 variant uses the sixth-generation MDmesh technology. The M6 typically offers lower Rds(on) and gate charge for the same die size compared to the M2 generation, which translates to lower conduction and switching losses. Pin-compatible in the same TO-220FP package, so a BOM swap is footprint-identical."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF36N60M6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF36N60M6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}