{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF35N65DM2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF35N65DM2","canonicalUrl":"https://icboms.com/stmicroelectronics/STF35N65DM2","factsUrl":"https://icboms.com/api/mcp/products/STF35N65DM2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ DM2 series, N-Channel MOSFET, Through Hole, TO-220-3 Full Pack, 650 V, 32 A (Tc) @ 25°C, 110mOhm @ 16A, 10V, -55°C ~ 150°C (TJ).","salesMarkdown":"The STF35N65DM2: N-channel 650 V MOSFET in the MDmesh DM2 series, rated 32 A continuous drain at 25 °C and 110 mOhm Rds(on) at 16 A, 10 V gate drive. ## Gate charge and switching — 56.3 nC at 10 V Gate charge is 56.3 nC at 10 V drive. Input capacitance is 2540 pF at 100 V drain bias. ## Thermal and package — 40 W dissipation in a fully isolated tab The TO-220FP (full-pack) case limits power dissipation to 40 W at case temperature, about half what a standard TO-220 with a metal tab can handle. That 40 W ceiling is the hard constraint for the thermal design: at 16 A and 110 mOhm, conduction loss alone is 28 W, leaving little headroom for switching loss. The isolated tab is a real advantage in production—no mica washer or thermal pad needed, which simplifies assembly and reduces thermal resistance to the heatsink.","metaTitle":"STF35N65DM2 N-Channel MOSFET, 650V, 32A, TO-220FP","metaDescription":"STMicroelectronics STF35N65DM2 MDmesh DM2 N-channel MOSFET, 650V Vdss, 32A Id, 110mOhm Rds(on), TO-220FP. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ DM2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STF35","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"110mOhm @ 16A, 10V","Power Dissipation (Max)":"40W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"56.3 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"2540 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"32A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.5197","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF35N65DM2/alternatives.json"},"ai":{"faq":[{"question":"Can STF35N65DM2 be used as a replacement for STF30N65DM2?","answer":"The STF35N65DM2 is a higher-current variant compared to the STF30N65DM2, with a 32 A continuous drain rating versus a lower current rating. Both are 650 V N-channel MOSFETs in the same TO-220FP package, so the STF35N65DM2 can serve as a drop-in replacement if the circuit's current and thermal margins accommodate the higher rating. Verify gate charge and switching performance in your specific topology before committing."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF35N65DM2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF35N65DM2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}