{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF33N60M6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF33N60M6","canonicalUrl":"https://icboms.com/stmicroelectronics/STF33N60M6","factsUrl":"https://icboms.com/api/mcp/products/STF33N60M6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF33N60M6, MDmesh M6 N-Channel MOSFET, 600 V Vdss, 125 mOhm Rds(on) at 10 V, 25 A Id, TO-220 Full Pack (TO-220FP), -55 to 150 °C.","salesMarkdown":"## 600 V, 125 mOhm — sizing the conduction loss The 125 mOhm Rds(on) at 10 V gate drive sets the conduction loss floor — at 12.5 A the drop is about 1.56 V, which at 35 W package dissipation limits the safe operating area in through-hole designs. Total gate charge is 33.4 nC at 10 V, with input capacitance Ciss of 1515 pF at 100 V drain bias. A typical gate driver delivering 1 A peak can charge the gate in about 33 ns — fast enough for 100 kHz hard-switched converters, but the 35 W package limit means the thermal impedance of the heatsink, not the die, will set the practical switching frequency ceiling. The gate threshold voltage maximum is 4.75 V at 250 µA drain current, so a 10 V gate drive is needed to achieve the rated Rds(on); 5 V logic-level drive will not fully enhance the channel. ## Package and mounting — TO-220 Full Pack","metaTitle":"STF33N60M6 N-Channel 600 V MOSFET, 125 mOhm, TO-220FP","metaDescription":"STF33N60M6 MDmesh M6 N-channel 600 V MOSFET, 125 mOhm Rds(on) at 10 V, 25 A continuous drain current, TO-220FP isolated tab.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M6","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Base Product Number":"STF33","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"125mOhm @ 12.5A, 10V","Power Dissipation (Max)":"35W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"33.4 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1515 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"25A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.7600","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/d24810c0d392e1bf142b8fb7c6e63070.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF33N60M6/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STF33N60M6 at Vgs = 10V?","answer":"Maximum on-resistance is 125 mOhm at 12.5 A drain current with 10 V gate drive. This is the value to use for worst-case conduction loss calculations at the rated operating point."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF33N60M6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF33N60M6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}