{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF33N60DM2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF33N60DM2","canonicalUrl":"https://icboms.com/stmicroelectronics/STF33N60DM2","factsUrl":"https://icboms.com/api/mcp/products/STF33N60DM2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ DM2 series, N-Channel MOSFET, 650 V drain-source, 24 A continuous drain at 25°C, 130 mOhm Rds(on) at 10 V gate drive, 43 nC total gate charge, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"The 35 W power dissipation rating in the TO-220FP full-pack package means the designer must keep the average dissipation below that ceiling. Gate charge totals 43 nC at 10 V, which at a 100 kHz switching frequency demands about 4.3 mA average from the gate driver — well within the capability of a standard MOSFET driver IC, but the peak current during the Miller plateau still needs to be sized for the target switching speed. ## Active production, TO-220FP sourcing It is ROHS3 compliant. ## Gate threshold and input capacitance — the drive and switching profile Input capacitance is 1870 pF at 100 V drain-source.","metaTitle":"STF33N60DM2 N-Channel MOSFET, 650 V, 24 A, TO-220FP","metaDescription":"STMicroelectronics STF33N60DM2 N-channel 650 V MOSFET in TO-220FP full-pack. 130 mOhm Rds(on) at 10 V, 43 nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ DM2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ DM2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STF33","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"130mOhm @ 12A, 10V","Power Dissipation (Max)":"35W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"43 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1870 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"24A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.0100","priceTiers":[{"qty":1,"price":"$5.01000","currency":"USD"},{"qty":10,"price":"$4.20400","currency":"USD"},{"qty":100,"price":"$3.40090","currency":"USD"},{"qty":500,"price":"$3.02306","currency":"USD"},{"qty":1000,"price":"$2.58849","currency":"USD"},{"qty":2000,"price":"$2.43734","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/44d29393cc92daa19b93d606f6f5924e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF33N60DM2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STF33N60DM2?","answer":"The maximum on-resistance is 130 mOhm at 12 A drain current with 10 V gate drive."},{"question":"Is STF33N60DM2 RoHS compliant?","answer":"Yes, the part is listed as ROHS3 compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF33N60DM2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF33N60DM2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}