{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF30NM60ND","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF30NM60ND","canonicalUrl":"https://icboms.com/stmicroelectronics/STF30NM60ND","factsUrl":"https://icboms.com/api/mcp/products/STF30NM60ND","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ II series, N-Channel MOSFET, 600 V, 25 A (Tc), 130 mOhm @ 12.5 A, 10 V, ±30 Vgs, TO-220-3 Full Pack, Through Hole, 150°C TJ.","salesMarkdown":"## 600 V FDmesh II N-channel in a full-pack TO-220 The STMicroelectronics STF30NM60ND is a 600 V, 25 A N-channel power MOSFET from the FDmesh™ II series, housed in a TO-220-3 Full Pack (TO-220FP) through-hole package. The FDmesh II technology integrates a fast-recovery body diode, making this part suited for bridge topologies and hard-switching converters where reverse-recovery losses matter. The full-pack package provides electrical isolation between the tab and the heatsink, simplifying mounting — no insulating pad or washer needed, which speeds assembly and improves thermal contact consistency. ## Key ratings for the power budget The 600 V drain-source voltage (Vdss) places this MOSFET in the high-voltage class for offline AC-DC converters, PFC stages, and flyback supplies up to several hundred watts. Gate charge of 100 nC at 10 Vgs tells you the drive energy per switching cycle — relevant when sizing the gate driver and estimating switching losses at frequency. ## Obsolete — sourcing and replacement planning","metaTitle":"STF30NM60ND N-Channel 600 V 25 A MOSFET, FDmesh II, TO-220FP","metaDescription":"STF30NM60ND N-channel 600 V 25 A MOSFET from STMicroelectronics FDmesh II series. 130 mOhm Rds(on) at 10 Vgs. TO-220FP full-pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STF30N","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"130mOhm @ 12.5A, 10V","Power Dissipation (Max)":"40W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"100 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2800 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"25A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.0599","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/29f15e566ee061056a68c373c9687472.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF30NM60ND/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STF30NM60ND?","answer":"A functionally equivalent 600 V N-channel MOSFET in TO-220FP from the same FDmesh family or a comparable device should be evaluated for replacement."},{"question":"What package is STF30NM60ND?","answer":"The full-pack construction provides electrical isolation between the mounting tab and the heatsink, eliminating the need for an insulating pad."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF30NM60ND","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF30NM60ND when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}