{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF27N60M2-EP","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF27N60M2-EP","canonicalUrl":"https://icboms.com/stmicroelectronics/STF27N60M2-EP","factsUrl":"https://icboms.com/api/mcp/products/STF27N60M2-EP","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M2-EP series, STF27N60M2-EP, N-Channel MOSFET, 600 V Vdss, 20 A Id, 163 mOhm Rds(on) @ 10 A, 10 V, TO-220-3 Full Pack, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V, 20 A N-channel power MOSFET in a full-pack TO-220 ## On-resistance and gate drive — what 163 mOhm at 10 V means Rds(on) is specified at 163 mOhm maximum with a 10 V gate-source voltage and 10 A drain current. That 10 V drive level is the recommended operating point for minimum on-resistance; the device is not characterised for logic-level gate thresholds. With a maximum gate threshold of 4.75 V at 250 µA, a 10 V rail is the practical choice to fully enhance the channel and keep conduction losses predictable across temperature. These numbers are moderate for a 600 V, 20 A device — the gate driver sees a manageable load, and switching losses at frequencies up to 100 kHz are reasonable for a hard-switched converter. ## Full-pack package — the isolated tab advantage The TO-220FP (full-pack) moulded body isolates the mounting tab from the drain, so the heatsink can be grounded or left floating without an insulating pad. This is a common choice in offline power supplies and motor drives where the heatsink is tied to earth or chassis ground. The package is through-hole mounted, which suits single-sided boards and hand-assembly or rework.","metaTitle":"STF27N60M2-EP N-Channel MOSFET, 600 V, 20 A, TO-220FP","metaDescription":"STF27N60M2-EP N-Channel MOSFET from STMicroelectronics MDmesh M2-EP series. 600 V Vdss, 20 A Id, 163 mOhm Rds(on). Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2-EP","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Base Product Number":"STF27","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"163mOhm @ 10A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"33 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1320 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"20A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.3100","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/efc66e756793421cc2023faf37d2d93c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF27N60M2-EP/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF27N60M2-EP","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF27N60M2-EP when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}