{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF26NM60N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF26NM60N","canonicalUrl":"https://icboms.com/stmicroelectronics/STF26NM60N","factsUrl":"https://icboms.com/api/mcp/products/STF26NM60N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh II N-Channel MOSFET, STF26NM60N, 600 V drain-source, 20 A continuous drain, 165 mOhm Rds(on) at 10 V, TO-220FP full-pack through-hole package.","salesMarkdown":"## 600 V switching with the TO-220FP full-pack ## Rds(on) and gate drive — sizing the thermal budget Gate charge totals 60 nC at 10 V. Power dissipation is capped at 35 W at the case. Input capacitance is 1800 pF at 50 V drain-source. ST lists the STF26NM60N as active product with ROHS3 compliance.","metaTitle":"STF26NM60N N-Channel MOSFET, 600V, 20A, TO-220FP","metaDescription":"STMicroelectronics STF26NM60N N-channel MDmesh II MOSFET, 600V Vdss, 20A Id, 165mOhm Rds(on) at 10V. TO-220FP full-pack. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"MDmesh™ II","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF26","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"165mOhm @ 10A, 10V","Power Dissipation (Max)":"35W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"60 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1800 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"20A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$7.0500","priceTiers":[{"qty":1,"price":"$7.05000","currency":"USD"},{"qty":10,"price":"$6.04600","currency":"USD"},{"qty":100,"price":"$5.03820","currency":"USD"},{"qty":500,"price":"$4.44546","currency":"USD"},{"qty":1000,"price":"$4.00092","currency":"USD"},{"qty":2000,"price":"$3.74901","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/46fdb4949ff775d296489ea1d568a63e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF26NM60N/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STF26NM60N at 10 V?","answer":"The maximum Rds(on) is 165 mOhm, specified at 10 A drain current with 10 V gate drive. This is the condition for the rated on-resistance; lower gate drive voltages will increase the effective Rds(on)."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF26NM60N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF26NM60N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}