{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF26N65DM2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF26N65DM2","canonicalUrl":"https://icboms.com/stmicroelectronics/STF26N65DM2","factsUrl":"https://icboms.com/api/mcp/products/STF26N65DM2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF26N65DM2, N-Channel MOSFET, MDmesh™ DM2 series, 650 V Vdss, 20 A continuous drain, 190 mOhm Rds(on) at 10 V, 35.5 nC gate charge, TO-220-3 Full Pack, -55 to 150 °C.","salesMarkdown":"## 650 V, 20 A — the switching-loss anchor for offline power Gate charge totals 35.5 nC at 10 V — at a 100 kHz switching frequency the gate driver must supply 3.55 mA average, well within the capability of most half-bridge driver ICs. ## TO-220FP — isolation without a mounting kit The TO-220 Full Pack (TO-220FP) moulds the backside tab in epoxy, so the tab is electrically isolated from the drain. Maximum power dissipation is 30 W at case temperature — the full-pack construction limits heat extraction compared to a standard TO-220 with exposed tab. The derating curve from 25 °C to 150 °C junction must be factored into the heatsink design for continuous operation above a few watts. The base product number is STF26; the full order code resolves to the 650 V, 20 A variant in the TO-220FP package.","metaTitle":"STF26N65DM2 N-Channel MOSFET, 650 V, 20 A, MDmesh DM2","metaDescription":"STF26N65DM2 N-channel MOSFET, 650 V Vdss, 20 A continuous drain, 190 mOhm Rds(on) at 10 V. Active lifecycle, TO-220FP package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ DM2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STF26","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 10A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"35.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1480 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"20A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.8933","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7df85218228b280c3b29966d7a3d67a2.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF26N65DM2/alternatives.json"},"ai":{"faq":[{"question":"What is the difference between STF26N65DM2 and STF26N65M2?","answer":"The STF26N65DM2 uses the MDmesh™ DM2 technology, which offers lower gate charge and faster switching compared to the earlier MDmesh™ M2 generation. The DM2 variant is optimised for higher-frequency operation in resonant and hard-switching topologies."},{"question":"Is STF26N65DM2 RoHS compliant?","answer":"The STF26N65DM2 is listed as RoHS compliant per STMicroelectronics' standard environmental compliance for the MDmesh DM2 series in the TO-220FP package."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF26N65DM2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF26N65DM2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}