{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF26N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF26N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STF26N60M2","factsUrl":"https://icboms.com/api/mcp/products/STF26N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ N-Channel MOSFET, STF26N60M2, 600 V Vdss, 20 A Id, 165 mOhm Rds(on) @ 11 A, 10 V, TO-220-3 Full Pack, Through Hole, -55°C to 150°C.","salesMarkdown":"## On-resistance and gate drive — sizing the gate driver and heatsink The gate threshold voltage is 4 V maximum at 250 µA drain current, so a 10 V gate drive rail is recommended to fully enhance the channel and achieve the rated on-resistance. With a maximum power dissipation of 30 W at the case, the TO-220FP's thermal resistance to heatsink must be factored in — the full-pack construction means the tab is electrically isolated but still needs a good thermal interface to the heatsink to keep junction temperature below 150°C at full load. ## Lifecycle and sourcing — still in production, no LTB risk For current designs this means no urgency to qualify an alternate; the part remains available through franchised and independent distribution.","metaTitle":"STF26N60M2 N-Channel MOSFET, 600 V, 20 A, 165 mOhm, TO-220FP","metaDescription":"STF26N60M2 N-channel MOSFET from STMicroelectronics MDmesh series: 600 V Vdss, 20 A Id, 165 mOhm Rds(on) at 10 V. TO-220FP full-pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF26","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"165mOhm @ 11A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"TO-220FP","Drain to Source Voltage (Vdss)":"600 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"20A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.0700","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/c5085c4182fde78bb841ce6add6a0e4c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF26N60M2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of the STF26N60M2?","answer":"The maximum on-resistance is 165 mOhm at a drain current of 11 A with a 10 V gate-source voltage."},{"question":"What is the closest alternative to the STF26N60M2?","answer":"A direct pin-compatible alternative within the same ST MDmesh™ family is the STF26N60M2-1, which shares the same 600 V, 20 A, 165 mOhm ratings and TO-220FP package. The difference is in the packaging format — the STF26N60M2-1 is supplied in Tube, while the base STF26N60M2 ships in Tube as well, so they are functionally identical for BOM substitution."},{"question":"Where can I buy the STF26N60M2 and get a price?","answer":"The STF26N60M2 is available to order through independent distribution."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF26N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF26N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}