{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF26N60DM6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF26N60DM6","canonicalUrl":"https://icboms.com/stmicroelectronics/STF26N60DM6","factsUrl":"https://icboms.com/api/mcp/products/STF26N60DM6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ DM6 series, N-Channel MOSFET, 600 V Vdss, 18 A continuous drain at 25°C, 195 mOhm Rds(on) at 10 V, 24 nC gate charge, TO-220-3 Full Pack (TO-220FP), -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V N-channel MOSFET from the MDmesh DM6 family The STF26N60DM6: Housed in a TO-220-3 Full Pack (TO-220FP) through-hole package, the mounting tab is electrically isolated from the die. Gate charge is 24 nC at 10 V. ## Package and thermal: TO-220FP with isolated tab The TO-220FP (Full Pack) package has a plastic encapsulation that electrically isolates the mounting tab from the drain. The maximum power dissipation is 30 W at case temperature, which means a properly sized heatsink is required for any continuous operation above a few amps. The through-hole mounting suits point-of-load or bulk-capacitor-laden boards where vibration resistance and mechanical retention matter. For dual-sourcing, the closest parametric match within the ST MDmesh DM6 family shares the same package and voltage rating — verify gate charge and Rds(on) differences against your switching frequency before substituting.","metaTitle":"STF26N60DM6 N-Channel MOSFET, 600 V, 18 A, TO-220FP","metaDescription":"STF26N60DM6 N-channel 600 V 18 A MOSFET from STMicroelectronics MDmesh DM6 series. 195 mOhm Rds(on) at 10 V, 24 nC gate charge. Active.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ DM6","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Base Product Number":"STF26","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"195mOhm @ 9A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"24 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"940 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"18A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.9300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/2b6bb8c86cc035d3be65decf29b0cac7.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF26N60DM6/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of the STF26N60DM6?","answer":"The maximum Rds(on) is 195 mOhm at 9 A drain current and 10 V gate drive. This is the value to use for conduction-loss calculations at the typical operating point."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF26N60DM6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF26N60DM6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}