{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF25NM60ND","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF25NM60ND","canonicalUrl":"https://icboms.com/stmicroelectronics/STF25NM60ND","factsUrl":"https://icboms.com/api/mcp/products/STF25NM60ND","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ II, N-Channel MOSFET, 600 Vdss, 21 A Id (Tc), 160 mOhm Rds(on) @ 10.5 A, 10 V, TO-220-3 Full Pack, Through Hole, ±25 Vgs max, 80 nC Qg @ 10 V, 2400 pF Ciss @ 50 V.","salesMarkdown":"The STF25NM60ND: The TO-220FP full-pack package provides a fully isolated tab, simplifying heatsink mounting without an insulating pad. For existing BOM lines, the only sourcing channel is the independent distribution market — surplus inventory, last-time-buy remnants, or broker stock. The 600 V Vdss gives a solid voltage margin for universal-input (85–265 VAC) power supplies, where the rectified DC bus peaks around 375 V. The 21 A continuous drain current is rated at case temperature 25°C — derating is significant at elevated case temperatures, so the actual usable current in a 100°C case environment will be lower. Gate charge of 80 nC at 10 V is moderate; a standard gate-driver IC can switch it in the 50–100 kHz range without excessive drive losses. Input capacitance of 2400 pF at 50 V Vds is typical for this voltage class and sets the switching loss contribution from the Miller plateau.","metaTitle":"STF25NM60ND N-Channel MOSFET, 600 V, 21 A, TO-220FP","metaDescription":"STF25NM60ND N-Channel MOSFET from STMicroelectronics, 600 Vdss, 21 A Id, 160 mOhm Rds(on), FDmesh II series, TO-220FP package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STF25","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"160mOhm @ 10.5A, 10V","Power Dissipation (Max)":"40W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"80 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2400 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"21A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF25NM60ND/alternatives.json"},"ai":{"faq":[{"question":"Is STF25NM60ND obsolete?","answer":"Yes, STMicroelectronics lists the STF25NM60ND as obsolete. It is not recommended for new designs, and existing BOM lines should plan for an alternative."},{"question":"What is the replacement for STF25NM60ND?","answer":"A parametric replacement would need to be a 600 V N-channel MOSFET in a TO-220FP package with comparable Rds(on) and gate charge. The STB25NM60ND is a surface-mount variant (D²PAK) and is not pin-compatible with the through-hole TO-220FP."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF25NM60ND","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF25NM60ND when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}