{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF25NM50N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF25NM50N","canonicalUrl":"https://icboms.com/stmicroelectronics/STF25NM50N","factsUrl":"https://icboms.com/api/mcp/products/STF25NM50N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF25NM50N, MDmesh™ II series, N-Channel MOSFET, 500 V Vdss, 22 A Id, 140 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, Through Hole, -55°C to 150°C.","salesMarkdown":"The STF25NM50N: The device is built on ST's MDmesh™ II technology, which reduces on-resistance and gate charge compared to planar MOSFETs of the same voltage class. ## 140 mOhm on-resistance and 84 nC gate charge — sizing the drive and thermal budget At 22 A continuous drain, conduction loss (I²R) reaches 68 W at the Rds(on) maximum — exceeding the 40 W package power dissipation limit, so the device must be operated with derating or in pulsed applications where average current stays within the SOA. Input capacitance is 2565 pF at 25 V drain-source, which influences the drive circuit's turn-on delay and the Miller plateau duration.","metaTitle":"STF25NM50N N-Channel MOSFET, 500 V, 22 A, TO-220FP","metaDescription":"STF25NM50N N-Channel MOSFET from STMicroelectronics MDmesh™ II series. 500 V drain-source, 22 A continuous drain, 140 mOhm Rds(on) at 10 V. TO-220 Full Pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF25","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"140mOhm @ 11A, 10V","Power Dissipation (Max)":"40W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"84 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"2565 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"22A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b3e5924fbd0faa37b89401b287df1aa1.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF25NM50N/alternatives.json"},"ai":{"faq":[{"question":"STF25NM50N vs STF25NM60N — what is the difference?","answer":"The STF25NM60N is a 600 V rated device in the same MDmesh™ II family, while the STF25NM50N is rated at 500 V. The 600 V variant offers higher voltage margin for applications with transient spikes, but the 500 V part typically has slightly lower on-resistance for the same die size. Both share the same TO-220 Full Pack package and pinout."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF25NM50N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF25NM50N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}