{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF24NM65N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF24NM65N","canonicalUrl":"https://icboms.com/stmicroelectronics/STF24NM65N","factsUrl":"https://icboms.com/api/mcp/products/STF24NM65N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II N-Channel MOSFET, STF24NM65N, 650 V Vdss, 19 A Id, 190 mOhm Rds(on), TO-220-3 Full Pack, Through Hole, Tube.","salesMarkdown":"The STF24NM65N is a 650 V N-channel MOSFET from STMicroelectronics' MDmesh™ II series, built in a through-hole TO-220FP full-pack package. The 650 V Vdss gives 15–20% derating margin on a 400 V DC bus typical of three-phase PFC stages or flyback primary-side clamps. ## Gate charge, capacitance, and the driver requirement Total gate charge is 70 nC at Vgs = 10 V. For a 100 kHz hard-switched converter, this translates to an average gate-drive current of 7 mA plus the peak current needed to charge Ciss (2500 pF at Vds = 50 V) within the desired switching interval. The ±25 V maximum gate rating allows use of standard 12–15 V gate drives without a clamp zener, but the Miller plateau region should be checked against the driver's sink capability to avoid shoot-through. Input capacitance Ciss is 2500 pF at Vds = 50 V — this is moderate for a 650 V device and keeps the driver load manageable for a typical 1–2 A gate-driver IC. The TO-220FP package's isolated tab means no heatsink isolation pad is needed, but the thermal resistance junction-to-case is higher than a standard TO-220, so the 40 W dissipation limit must be respected in the layout. STMicroelectronics has marked the STF24NM65N as obsolete. ## Temperature grade and environment This suits applications in engine-bay electronics, outdoor telecom rectifiers, and downhole instrumentation where the ambient temperature exceeds the commercial 85°C limit. The threshold voltage Vgs(th) is 4 V maximum at Id = 250 µA, ensuring the device is fully off with a 0 V gate signal across the full temperature range.","metaTitle":"STMicroelectronics STF24NM65N N-Ch MOSFET, 650V, 19A","metaDescription":"STF24NM65N MDmesh™ II N-channel MOSFET, 650V Vdss, 19A Id, 190mOhm Rds(on). Obsolete — sourced to order against RFQ through independent distribution.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF24","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 9.5A, 10V","Power Dissipation (Max)":"40W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"70 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"2500 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"19A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/d3638c5436658026a418ea20e38acc35.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF24NM65N/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) at operating temperature for the STF24NM65N?","answer":"The datasheet specifies 190 mOhm maximum at 9.5 A and Vgs = 10 V at 25°C. At 125°C junction temperature, the on-resistance approximately doubles to around 380 mOhm. Conduction loss calculations should use the hot Rds(on) for the expected junction temperature, not the 25°C headline figure."},{"question":"What package does the STF24NM65N use and does it need a heatsink insulator?","answer":"It comes in a TO-220-3 Full Pack (TO-220FP) through-hole package. The full-pack construction means the metal tab is electrically isolated from the drain — no mica washer or silicone pad is needed between the device and the heatsink. The supplier device package is TO-220FP."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF24NM65N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF24NM65N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-21T04:59:03.979Z","lastPublished":"2026-07-21T04:59:03.979Z","indexable":true}}