{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF24NM60N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF24NM60N","canonicalUrl":"https://icboms.com/stmicroelectronics/STF24NM60N","factsUrl":"https://icboms.com/api/mcp/products/STF24NM60N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II series, STF24NM60N, N-Channel MOSFET, 600 V Vdss, 17 A Id, 190 mOhm Rds(on), TO-220-3 Full Pack, Through Hole, -55°C to 150°C.","salesMarkdown":"At 8 A drain current and 10 V gate drive, the 190 mOhm Rds(on) max produces 12.2 W conduction loss — well within the 30 W package dissipation limit at Tc=25°C, but the TO-220FP's thermal resistance means the case will run hot in still air. The 46 nC total gate charge at 10 V is moderate; a typical gate driver delivering 1 A can switch the FET in under 50 ns, keeping crossover losses manageable in hard-switched topologies up to 100 kHz. ## TO-220 Full Pack: no insulating washer needed The through-hole mounting suits point-of-load boards and repair replacements where a soldered joint is preferred over a press-fit clip.","metaTitle":"STF24NM60N N-Channel MOSFET, 600 V, 17 A, TO-220FP","metaDescription":"STMicroelectronics STF24NM60N N-channel MOSFET, 600 V Vdss, 17 A continuous drain, 190 mOhm Rds(on), TO-220FP full-pack package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF24","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 8A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"46 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1400 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"17A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.4700","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/8188d0d39d9858d63698f380d190148a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF24NM60N/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of the STF24NM60N?","answer":"The maximum on-resistance is 190 mOhm at 8 A drain current with 10 V gate drive. This is the value to use for worst-case conduction loss calculations in your thermal design."},{"question":"Can the STF24NM60N replace the STP24NM60N?","answer":"The STF24NM60N and STP24NM60N share the same die but differ in package — the STF version is a TO-220 Full Pack with an isolated tab, while the STP is a standard TO-220 with a live drain tab. They are not pin-compatible for a direct swap unless the heatsink mounting accounts for the isolation difference."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF24NM60N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF24NM60N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}