{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF24N60DM2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF24N60DM2","canonicalUrl":"https://icboms.com/stmicroelectronics/STF24N60DM2","factsUrl":"https://icboms.com/api/mcp/products/STF24N60DM2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ II Plus N-Channel MOSFET, STF24N60DM2, 600V Vdss, 18A Id, 200mOhm Rds(on), TO-220 Full Pack, Tube.","salesMarkdown":"## 600 V, 18 A N-channel in the isolated TO-220 Full Pack The STF24N60DM2 is an N-channel power MOSFET from STMicroelectronics' FDmesh™ II Plus series, rated for 600 V drain-source voltage and 18 A continuous drain current at 25°C case temperature. The 200 mOhm max on-resistance at 9 A, 10 V gate drive defines the conduction loss at the operating point — a key number for the thermal budget in a 100 W-class offline flyback or PFC stage. The TO-220 Full Pack (isolated tab) package eliminates the need for a separate insulating pad and washer when bolting to a heatsink — the backside is electrically isolated, so the mounting screw torque and thermal interface material are the only assembly variables. This matters in high-voltage designs where a live tab would require extra creepage clearance. ## Gate charge and switching loss — 29 nC at 10 V Total gate charge Qg is 29 nC at Vgs = 10 V. For a switching frequency of 100 kHz, the average gate drive current required is Qg × fsw = 2.9 mA — well within the capability of a standard gate driver IC. The input capacitance Ciss is 1055 pF at Vds = 100 V; this sets the Miller plateau duration and the turn-on/turn-off delay. The 200 mOhm Rds(on) at 9 A means the conduction loss at 9 A is I²R = 16.2 W, which must be dissipated within the 30 W power dissipation limit at Tc = 25°C. The junction temperature range spans -55°C to 150°C, so the device can handle the thermal cycling of an industrial motor drive or a telecom rectifier that sees ambient swings from cold start to full load. The Vgs(th) maximum is 5 V at 250 µA drain current — the gate threshold is high enough to stay off with a 0 V gate signal even at elevated temperature, which is a standard requirement for a normally-off power switch.","metaTitle":"STF24N60DM2 N-Channel MOSFET, 600V, 18A, TO-220 Full Pack","metaDescription":"STMicroelectronics STF24N60DM2 N-channel 600V 18A MOSFET in TO-220 Full Pack. Active production, ROHS3 compliant. Sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":"FDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STF24","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"200mOhm @ 9A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"TO-220 Full Pack","Gate Charge (Qg) (Max) @ Vgs":"29 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1055 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"18A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.9300","priceTiers":[{"qty":1,"price":"$3.07000","currency":"USD"},{"qty":10,"price":"$2.76000","currency":"USD"},{"qty":100,"price":"$2.26110","currency":"USD"},{"qty":500,"price":"$1.92482","currency":"USD"},{"qty":1000,"price":"$1.91432","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/3de5e16e8395fb525746f0f2b5289850.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF24N60DM2/alternatives.json"},"ai":{"faq":[{"question":"What is the closest second-source to the STF24N60DM2?","answer":"The STF24N60M6 is a functional peer in the same TO-220 Full Pack package. It has a slightly lower gate charge (23 nC vs 29 nC) and a marginally lower Rds(on) (190 mOhm vs 200 mOhm), but the same 600 V rating and 18 A continuous drain current. The pinout and footprint are identical, so a BOM swap is straightforward without a board spin."},{"question":"What compliance documentation does STMicroelectronics provide for the STF24N60DM2?","answer":"The STF24N60DM2 is ROHS3 Compliant. STMicroelectronics provides a RoHS certificate of compliance and a material declaration upon request. No UL or IEC certification is listed in the product record."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF24N60DM2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF24N60DM2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}