{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF20NF06L","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF20NF06L","canonicalUrl":"https://icboms.com/stmicroelectronics/STF20NF06L","factsUrl":"https://icboms.com/api/mcp/products/STF20NF06L","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ II, N-Channel MOSFET, 60 V Drain-Source, 20 A Continuous Drain, 70 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, Through Hole, -55 to 175 °C.","salesMarkdown":"## 60 V, 20 A N-channel — the switching envelope The STF20NF06L N-channel MOSFET from the STripFET II series is rated for 60 V drain-source and 20 A continuous drain current. ## 175 °C junction — built for hot environments The TO-220FP full-pack package isolates the tab electrically — no insulating pad needed against the heatsink, which simplifies mounting in tight enclosures. Total gate charge at 10 V is 7.5 nC, and input capacitance at 25 V drain-source is 400 pF. These numbers are low enough that a standard gate driver or even a microcontroller GPIO with a series resistor can drive the gate into hard saturation at moderate switching frequencies — no dedicated driver IC required for many load-switching or low-frequency PWM applications. ST lists the STF20NF06L as obsolete.","metaTitle":"STF20NF06L N-Channel MOSFET, 60V 20A, 70 mOhm, STripFET II","metaDescription":"STF20NF06L N-channel MOSFET from STMicroelectronics STripFET II series. 60V Vdss, 20A Id, 70 mOhm Rds(on) at 10V. TO-220FP full-pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±18V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF20","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"70mOhm @ 10A, 10V","Power Dissipation (Max)":"28W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"7.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"400 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"5V, 10V","Current - Continuous Drain (Id) @ 25°C":"20A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/6e6f4ce26a18fc70e28968011c544ea3.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF20NF06L/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STF20NF06L?","answer":"The maximum Rds(on) is 70 mOhm at 10 A drain current with 10 V gate drive. A lower on-resistance of approximately 60 mOhm typical can be expected at 10 V, but the 70 mOhm ceiling is the design limit for thermal budgeting."},{"question":"What is the Vgs threshold of STF20NF06L?","answer":"The maximum gate threshold voltage is 4 V at 250 µA drain current. This means the part is fully enhanced with a 5 V gate drive, but a 3.3 V logic signal may not reliably turn it on — use a 5 V or 10 V gate driver for guaranteed saturation."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF20NF06L","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF20NF06L when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}