{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF20N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF20N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STF20N65M5","factsUrl":"https://icboms.com/api/mcp/products/STF20N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ V series, STF20N65M5, N-Channel MOSFET, 650 V Vdss, 18 A Id, 190 mOhm Rds(on) @ 10 V, 45 nC Qg, TO-220FP through-hole package.","salesMarkdown":"## TO-220FP full-pack — one less insulator to worry about The TO-220FP is the fully isolated version of the standard TO-220. The plastic body extends around the back tab, so the mounting surface is electrically isolated from the drain. It simplifies assembly and reduces BOM count, though the thermal resistance junction-to-case is higher than a standard TO-220 because the plastic adds a thermal barrier. The 30 W dissipation ceiling reflects that; if you need to push more current, the non-isolated TO-220 sibling (STP20N65M5) would run cooler for the same load.","metaTitle":"STF20N65M5 N-Channel MOSFET, 650 V, 18 A, MDmesh V TO-220FP","metaDescription":"STF20N65M5 N-channel MOSFET from STMicroelectronics MDmesh V series. 650 V Vdss, 18 A Id, 190 mOhm Rds(on) at 10 V. TO-220FP full-pack, active product.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STF20","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 9A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"45 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1345 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"18A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.3200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/dd1ce0f73a933ba858896e2e87c1ecfe.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF20N65M5/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of the STF20N65M5?","answer":"The maximum on-resistance is 190 mOhm at 9 A drain current and 10 V gate drive. That is the figure to use for worst-case conduction loss calculations in a power supply or motor-drive output stage."},{"question":"What does the STF20N65M5 datasheet say about the gate drive?","answer":"The recommended drive voltage for achieving the rated on-resistance is 10 V. The maximum gate-to-source voltage is ±25 V. The typical gate charge is 45 nC at 10 V, which is modest — a standard gate-driver IC with 1–2 A peak drive will switch it fast enough for most 65–100 kHz converters."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF20N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF20N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}