{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF18NM60N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF18NM60N","canonicalUrl":"https://icboms.com/stmicroelectronics/STF18NM60N","factsUrl":"https://icboms.com/api/mcp/products/STF18NM60N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II, STF18NM60N, N-Channel MOSFET, 600V Vdss, 13A Id, 285mOhm Rds(on), 35nC Qg, TO-220-3 Full Pack, -55°C to 150°C.","salesMarkdown":"## 600 V N-channel in a full-pack TO-220 ## 285 mOhm on-resistance and 35 nC gate charge Maximum on-resistance is 285 mOhm at 6.5 A and 10 V. Gate charge is 35 nC at 10 V. Input capacitance Ciss is 1000 pF at Vds = 50 V, a moderate value that does not demand an aggressive gate driver but still requires a proper gate loop layout to avoid ringing. ## Junction temperature range and package thermal limits Maximum power dissipation is 30 W at the case — the TO-220FP's full-plastic construction has higher thermal resistance than a standard TO-220 with a metal tab, so the heatsink design must account for the package's RthJC.","metaTitle":"STF18NM60N MOSFET N-Ch 600V 13A TO-220FP, MDmesh II","metaDescription":"STF18NM60N N-channel 600V 13A MOSFET in TO-220FP, 285mOhm Rds(on), -55 to 150°C.","metaKeywords":null},"attributes":{"series":"MDmesh™ II","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF18","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"285mOhm @ 6.5A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"35 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1000 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"13A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.8000","priceTiers":[{"qty":1,"price":"$2.94000","currency":"USD"},{"qty":10,"price":"$2.63800","currency":"USD"},{"qty":100,"price":"$2.12010","currency":"USD"},{"qty":500,"price":"$1.74184","currency":"USD"},{"qty":1000,"price":"$1.64325","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/96363dee3772bb62650d49bb16cee864.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF18NM60N/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STF18NM60N?","answer":"Maximum Rds(on) is 285 mOhm at a drain current of 6.5 A and a gate-source voltage of 10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF18NM60N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF18NM60N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}