{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF18N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF18N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STF18N60M2","factsUrl":"https://icboms.com/api/mcp/products/STF18N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh II Plus STF18N60M2, N-channel 600 V MOSFET, 13 A, 280 mOhm Rds(on) at 10 V, 21.5 nC gate charge, TO-220FP full-pack, -55 to 150 °C.","salesMarkdown":"## 600 V N-channel with a full-pack body — why the package matters That saves a BOM line and eliminates the assembly step of placing a silicone pad or mica washer. ## Conduction loss and gate drive budget The typical value from the description is 0.255 Ohm — the 280 mOhm max is the number to use for worst-case thermal calculations. Gate charge is 21.5 nC at 10 V, which keeps the gate-drive power low in a 100 kHz switching regulator; a typical 1 A gate driver charges the gate in about 22 ns. Input capacitance is 791 pF at 100 V drain-source — this is the Ciss that the driver sees during the Miller plateau. The low capacitance relative to the 600 V / 13 A rating is the MDmesh II Plus design target: fast switching with reduced crossover losses in hard-switched topologies. ## Thermal and temperature envelope The 25 W ceiling means this part is not for a multi-kilowatt inverter stage — it fits auxiliary supplies, PFC stages up to about 300 W, and flyback converters where the full-pack isolation simplifies the mechanical design. The 150 °C Tj max is standard for industrial SMPS designs that see sustained load.","metaTitle":"STF18N60M2 N-Channel 600 V MOSFET, 280 mOhm, TO-220FP","metaDescription":"ST MDmesh II Plus N-channel 600 V MOSFET, 13 A continuous, 280 mOhm Rds(on) at 10 V. TO-220FP full-pack. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF18","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 6.5A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"21.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"791 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"13A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.3800","priceTiers":[{"qty":1,"price":"$2.38000","currency":"USD"},{"qty":10,"price":"$1.97900","currency":"USD"},{"qty":100,"price":"$1.57540","currency":"USD"},{"qty":500,"price":"$1.33304","currency":"USD"},{"qty":1000,"price":"$1.13106","currency":"USD"},{"qty":2000,"price":"$1.07451","currency":"USD"},{"qty":5000,"price":"$1.03411","currency":"USD"},{"qty":10000,"price":"$0.99988","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/4347f94b9e63a16ea6986f2cfd8d727c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF18N60M2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STF18N60M2?","answer":"The typical value is 0.255 Ohm per the product description."},{"question":"STF18N60M2 vs IRF840?","answer":"The IRF840 is a 500 V, 8 A, 0.85 Ohm MOSFET in a standard TO-220 (non-isolated) package. The STF18N60M2 offers a higher 600 V drain-source rating, higher 13 A continuous current, lower 280 mOhm Rds(on), and the TO-220FP full-pack isolation. The ST part is a newer MDmesh II Plus generation with significantly lower gate charge (21.5 nC vs approximately 40 nC for the IRF840), which reduces switching losses at higher frequencies."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF18N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF18N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}