{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF16NK60Z","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF16NK60Z","canonicalUrl":"https://icboms.com/stmicroelectronics/STF16NK60Z","factsUrl":"https://icboms.com/api/mcp/products/STF16NK60Z","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH™ STF16NK60Z, N-Channel MOSFET, 600 V Vdss, 14 A continuous drain, 420 mOhm Rds(on) at 10 V, TO-220-3 Full Pack (TO-220FP), through-hole mount.","salesMarkdown":"## 600 V, 14 A N-channel in an isolated TO-220FP Gate threshold voltage is 4.5 V maximum at 50 µA drain current, and total gate charge is 86 nC at 10 V gate bias. Input capacitance measures 2650 pF typical at 25 V drain-source. Maximum power dissipation is 40 W at case temperature. The part is through-hole mounted and rated for a junction temperature of 150 °C. For new designs or long-term production, a pin-compatible replacement with the same 600 V, 14 A rating and TO-220FP package should be qualified. The TO-220FP package is fully isolated — a standard TO-220 with a metal tab will not be a drop-in unless you add an insulator and change the mounting hardware. Gate charge of 86 nC and input capacitance of 2650 pF set the switching drive requirements; a replacement with significantly higher Qg or Ciss will slow the edges and increase switching loss in the same gate-drive circuit. The 40 W power dissipation ceiling at case temperature also bounds the thermal design — a replacement with a lower Rds(on) may still be limited by the same package's thermal resistance.","metaTitle":"STF16NK60Z N-Channel MOSFET, 600V 14A, TO-220FP, Obsolete","metaDescription":"STF16NK60Z SuperMESH N-channel MOSFET, 600V Vdss, 14A continuous drain, 420mOhm Rds(on) in TO-220FP.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STF16","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"420mOhm @ 7A, 10V","Power Dissipation (Max)":"40W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"86 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2650 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"14A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.0400","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9ef2a204242cc009b9ad86734bfcec68.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for STF16NK60Z?","answer":"No official replacement order code is provided by STMicroelectronics. A suitable replacement must match the 600 V Vdss, 14 A continuous drain current, 420 mOhm Rds(on) at 10 V, and the TO-220FP isolated package. Qualify any candidate against these parameters and the gate charge and input capacitance for switching performance."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF16NK60Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF16NK60Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}