{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF16N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF16N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STF16N65M5","factsUrl":"https://icboms.com/api/mcp/products/STF16N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF16N65M5, MDmesh™ V N-Channel MOSFET, 650V Vdss, 12A Id, 299mOhm Rds(on), TO-220-3 Full Pack (TO-220FP), Tube.","salesMarkdown":"## 650 V, 12 A MDmesh V — conduction-loss optimised for offline power The STF16N65M5 is an N-channel power MOSFET from ST's MDmesh™ V series, rated for 650 V drain-source breakdown and 12 A continuous drain current at 25°C case temperature. The 299 mOhm maximum on-resistance at 6 A, 10 V gate drive is the headline figure for conduction-loss budgeting in a 650 V class part — lower than the M2-generation peers at the same voltage rating, which makes this device a fit where the switching frequency is moderate and the dominant loss is I²R. ## Gate charge and switching-speed trade-off Total gate charge Qg is 45 nC at 10 V gate drive — roughly 2.3× that of the M2-generation STF16N65M2 (19.5 nC). The M5 series achieves lower Rds(on) by using a thicker epitaxial layer, which stores more charge in the drift region; the buyer's trade-off is higher gate-drive current at the target switching frequency. For a 100 kHz hard-switched PFC stage, the average gate current is 4.5 mA (45 nC × 100 kHz), well within a typical driver's capability, but the switching loss per cycle is proportionally higher. Input capacitance Ciss is 1250 pF at 100 V drain-source — a moderate figure for the voltage class. The Miller plateau charge is not separately listed, but the Qgd / Qgs ratio typical of MDmesh V devices keeps the turn-on delay within a few tens of nanoseconds when driven from a standard 10 V gate signal. ## TO-220FP — isolated tab, no washer needed The TO-220 Full Pack (TO-220FP) package has the die mounted on a fully moulded plastic tab — the backside metal is not electrically connected to the drain. This eliminates the need for a silicone pad or mica washer when bolting the device to a heatsink, simplifying assembly and reducing thermal interface resistance. The penalty is a higher junction-to-case thermal resistance than a standard TO-220; the rated power dissipation is 25 W at case temperature, so the thermal budget must account for the full-pack derating. ## Active lifecycle and sourcing posture The STF16N65M5 carries an active lifecycle status — no NRND or EOL flags from STMicroelectronics. ROHS3 compliant per the evidence. Sourced to order against BOM quantities through independent distribution; availability and current pricing confirmed at RFQ.","metaTitle":"STF16N65M5 STMicro N-Ch 650V 12A TO-220FP MOSFET","metaDescription":"STF16N65M5 N-channel 650V 12A MOSFET, MDmesh V series, 299mOhm Rds(on), 45nC Qg. Active production, ROHS3. Quoted to order.","metaKeywords":null},"attributes":{"series":"MDmesh™ V","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STF16","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"299mOhm @ 6A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"45 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1250 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"12A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.1300","priceTiers":[{"qty":1,"price":"$3.13000","currency":"USD"},{"qty":10,"price":"$2.62700","currency":"USD"},{"qty":100,"price":"$2.12510","currency":"USD"},{"qty":500,"price":"$1.88894","currency":"USD"},{"qty":1000,"price":"$1.61741","currency":"USD"},{"qty":2000,"price":"$1.52296","currency":"USD"},{"qty":5000,"price":"$1.46112","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/e1f4c68bb44665331edb3ff56e21363e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF16N65M5/alternatives.json"},"ai":{"faq":[{"question":"Will STF16N65M5 drop into a board that was specified around STF16N60M2?","answer":"The STF16N65M5 and STF16N60M2 share the same TO-220FP footprint and pinout (gate, drain, source). The key differences are the 650 V vs 600 V breakdown, 299 mOhm vs 320 mOhm Rds(on), and 45 nC vs 19 nC Qg. The higher gate charge of the M5 may require a gate-driver current adjustment at the same switching frequency; the thermal and capacitive loads are otherwise compatible without a board spin."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF16N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF16N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}