{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF16N50M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF16N50M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STF16N50M2","factsUrl":"https://icboms.com/api/mcp/products/STF16N50M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M2 series, N-Channel MOSFET, TO-220-3 Full Pack, 500 V Vdss, 13 A Id, 280 mOhm Rds(on) @ 10 V.","salesMarkdown":"## Active BOM fit for 500 V switching The STF16N50M2: This is a through-hole device in the TO-220 Full Pack package, which isolates the mounting tab electrically — no insulating washer needed against the heatsink. ## Rds(on) at junction temperature, not 25°C That number is at 25°C junction — the real Rds(on) at 125°C junction roughly doubles, so budget 500-560 mOhm in the conduction loss calculation for a 100°C+ heatsink. The 19.5 nC total gate charge (Qg) at 10 V gives a figure of merit (Rds(on) × Qg) of about 5.5 nC·Ohm, competitive for this voltage class and useful for estimating switching loss in hard-switched topologies. ## Switching loss and driver sizing Input capacitance Ciss is 710 pF at 100 V Vds — a moderate value that keeps the gate drive current requirement manageable. The ±25 V maximum gate-source rating gives headroom for driving with a 12-15 V gate signal without approaching the breakdown. ## Thermal budget in the Full Pack The TO-220 Full Pack package has higher thermal resistance than the standard TO-220 because the plastic encapsulates the die on all sides — expect RthJC around 5-6 °C/W. At 125°C junction limit, the usable continuous dissipation drops to about 20 W. A 100°C case temperature under full load leaves only about 8 W margin before hitting the 150°C junction maximum. ## Sourcing and compliance posture STMicroelectronics lists the STF16N50M2 as Active product status. It is RoHS3 compliant.","metaTitle":"STF16N50M2 STMicro N-Ch MOSFET, 500V, 13A, TO-220","metaDescription":"STF16N50M2 active N-channel MOSFET, 500V Vdss, 13A Id, 280mOhm Rds(on), MDmesh M2 series. Sourced to order against RFQ. RoHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF16","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 6.5A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220 Full Pack","Gate Charge (Qg) (Max) @ Vgs":"19.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"710 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"13A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.0100","priceTiers":[{"qty":1,"price":"$4.01000","currency":"USD"},{"qty":10,"price":"$3.37100","currency":"USD"},{"qty":100,"price":"$2.72700","currency":"USD"},{"qty":500,"price":"$2.42400","currency":"USD"},{"qty":1000,"price":"$2.07555","currency":"USD"},{"qty":2000,"price":"$1.95435","currency":"USD"},{"qty":5000,"price":"$1.87500","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/5cd7623c52290c4d45e2dafe2fa41dda.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF16N50M2/alternatives.json"},"ai":{"faq":[{"question":"What is the closest functional alternative — STF16N65M2?","answer":"The STF16N65M2 is the 650 V rated sibling in the same MDmesh M2 series, same TO-220 Full Pack package, same gate charge (19.5 nC). It drops the drain current to 11 A and raises Rds(on) to 360 mOhm. If your design has voltage margin above 500 V, the 650 V part fits the same footprint and drive circuit, but the higher on-resistance increases conduction loss by about 28%."},{"question":"What compliance documentation does STMicroelectronics provide?","answer":"The STF16N50M2 is RoHS3 compliant per the manufacturer's declaration. Standard compliance documentation includes the RoHS certificate of compliance and REACH declaration, available through the distributor upon request."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF16N50M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF16N50M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}