{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF14N80K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF14N80K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STF14N80K5","factsUrl":"https://icboms.com/api/mcp/products/STF14N80K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ K5 series N-channel MOSFET, 800V drain-source voltage, 12A continuous drain current, 445mOhm on-resistance at 10V gate drive, TO-220-3 Full Pack through-hole package, -55°C to 150°C operating temperature.","salesMarkdown":"## 800 V N-channel MOSFET for high-voltage power conversion ## What the 800 V rating means for your design An 800 V drain-source voltage rating gives you margin for universal-input AC-DC converters (85–265 VAC) where the rectified DC bus peaks near 375 V. The 800 V rating also covers flyback and forward converters with reflected voltage spikes, plus PFC boost stages operating from a 400 V DC bus. Gate charge is 22 nC at 10 V, which means the gate driver does not need to source heavy peak current for fast switching. ## Temperature range and package suitability The through-hole mounting suits point-of-load assemblies and prototype builds where rework access matters. For dual-sourcing or a pin-compatible alternative within the same MDmesh K5 family, the STF14N80K5 shares the same TO-220FP footprint and 800 V / 12 A rating with other K5 series parts; parametric differences are in on-resistance and gate charge, so verify the specific Rds(on) and Qg against your switching loss budget.","metaTitle":"STF14N80K5 N-Channel MOSFET, 800V, 12A, MDmesh K5","metaDescription":"STF14N80K5 800V N-channel MOSFET from STMicroelectronics MDmesh K5 series. 445mOhm Rds(on) at 10V, 12A continuous drain, TO-220FP.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ K5","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STF14","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"445mOhm @ 6A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"22 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"620 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"12A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.5700","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/3a1dd9bc2d5fd15843c200bd637703e5.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds on of STF14N80K5?","answer":"The maximum on-resistance is 445 mOhm at 6 A drain current with 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF14N80K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF14N80K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}