{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF13NM60N-H","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF13NM60N-H","canonicalUrl":"https://icboms.com/stmicroelectronics/STF13NM60N-H","factsUrl":"https://icboms.com/api/mcp/products/STF13NM60N-H","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II N-Channel MOSFET, 600 V Vdss, 11 A Id, 360 mOhm Rds(on) @ 10 V, TO-220-3 Full Pack (TO-220FP), Through Hole, ±25 V Vgs(max), 30 nC gate charge, 790 pF input capacitance.","salesMarkdown":"## 600 V MDmesh II MOSFET in a fully isolated TO-220FP A maximum gate charge of 30 nC at 10 V gate drive, combined with an input capacitance of 790 pF at 50 V drain-source, keeps the switching losses manageable in hard-switched topologies operating in the tens to low hundreds of kilohertz. The 4 V maximum gate threshold at 250 µA drain current means a 10 V gate drive is the practical choice to achieve the rated Rds(on); a logic-level drive at 5 V will not fully enhance the channel. For sustainment of existing BOM lines, last-time-buy stock and new-old-stock (NOS) are available through independent distribution channels.","metaTitle":"STF13NM60N-H N-Channel MOSFET, 600 V, 11 A, TO-220FP","metaDescription":"STF13NM60N-H MDmesh II N-channel MOSFET, 600 V Vdss, 11 A Id, 360 mOhm Rds(on).","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF13","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"360mOhm @ 5.5A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"30 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"790 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/15a11da739c7fbdc161b0cdedfec971d.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF13NM60N-H/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement or equivalent for STF13NM60N-H?","answer":"No official replacement or cross-reference is recorded for the STF13NM60N-H. For a form-fit-function substitute, evaluate other 600 V N-channel MOSFETs in the TO-220FP package with similar Rds(on) and gate charge — parametric matching should be verified against the application's switching frequency and drive voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF13NM60N-H","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF13NM60N-H when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}