{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF130N10F3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF130N10F3","canonicalUrl":"https://icboms.com/stmicroelectronics/STF130N10F3","factsUrl":"https://icboms.com/api/mcp/products/STF130N10F3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ III, N-Channel MOSFET, 100 V drain-source, 46 A continuous drain, 9.6 mOhm Rds(on) @ 23 A, 10 V gate drive, 57 nC gate charge, TO-220-3 Full Pack through-hole, -55°C to 175°C junction.","salesMarkdown":"## 100 V N-channel with 9.6 mOhm Rds(on) — the conduction loss story The STMicroelectronics STF130N10F3 is a 100 V N-channel power MOSFET from the STripFET™ III family, built on a planar stripe technology that keeps specific Rds(on) low for its voltage class. For a 10 A load, that works out to under 1 W dissipation in the channel alone, which the TO-220FP full-pack package can handle with a modest heatsink. The 46 A continuous drain rating at 25°C case temperature tells you the silicon can move current; the 35 W power dissipation limit at case temperature tells you the package ceiling. ## Gate drive and switching — what 57 nC Qg means for the driver Gate charge is 57 nC at 10 V Vgs, which is moderate for a 100 V, 46 A die. ## Obsolete — no factory orders, only surplus and broker channels This means the original fab line has shut down, and no new factory orders are accepted. The only sourcing path is through independent distributors and surplus brokers who hold remaining inventory or can locate stock from the spot market. ## Package and mounting — TO-220FP full-pack isolation The through-hole TO-220-3 Full Pack (TO-220FP) package has a fully isolated back tab — no exposed drain tab, which eliminates the need for an insulating washer or thermal pad against the heatsink. The supplier device package designation is TO-220FP, which is the same physical outline. The full-pack construction adds about 1°C/W to the junction-to-case thermal resistance compared to a standard TO-220, so heatsink selection should account for the slightly higher thermal impedance.","metaTitle":"STF130N10F3 N-Channel MOSFET, 100V, 9.6mOhm, TO-220FP","metaDescription":"ST STF130N10F3 N-Channel MOSFET, 100V Vdss, 9.6mOhm Rds(on) at 23A, 10V gate drive. TO-220FP full pack, -55°C to 175°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ III","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF13","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"9.6mOhm @ 23A, 10V","Power Dissipation (Max)":"35W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"57 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"3305 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"46A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.4200","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/82871edfbe07b460285204fd2a278edc.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement or equivalent for STF130N10F3?","answer":"STMicroelectronics does not list an official successor order code for the STF130N10F3. The closest functional replacement would be another 100 V N-channel MOSFET in TO-220FP package with similar Rds(on) and gate charge — but pin-for-pin compatibility and thermal performance must be verified against the original PCB layout and operating conditions. No direct equivalent is confirmed in the available records."},{"question":"What is the Rds(on) and Vgs(th) of STF130N10F3?","answer":"The maximum Rds(on) is 9.6 mOhm at 23 A drain current with a 10 V gate-source voltage. The maximum gate threshold voltage is 4 V at 250 µA drain current. These are the key figures for conduction loss estimation and gate drive margin."},{"question":"Is STF130N10F3 RoHS compliant?","answer":"The evidence records do not explicitly state RoHS compliance status."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF130N10F3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF130N10F3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}