{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF12N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF12N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STF12N65M2","factsUrl":"https://icboms.com/api/mcp/products/STF12N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF12N65M2, MDmesh™ M2 series, N-Channel MOSFET, 650 V, 8 A, TO-220-3 Full Pack, Through Hole, Tube.","salesMarkdown":"## Gate charge and switching budget The STF12N65M2: Input capacitance (Ciss) is 535 pF at 100 V drain bias, which combined with the gate resistance sets the turn-on and turn-off delay. A 10 Ω external gate resistor yields an RC time constant of roughly 5 ns. ## Thermal and package integration Housed in a TO-220 Full Pack (TO-220FP) with the die electrically isolated from the mounting tab — no insulating washer needed between the device and the heatsink. Maximum power dissipation is 25 W at case temperature. The through-hole package suits point-to-point wiring or PCB layouts with adequate copper area for thermal spreading.","metaTitle":"STF12N65M2 MOSFET, N-Ch 650V 8A TO-220FP, STMicroelectronics","metaDescription":"STF12N65M2 N-channel 650V 8A MOSFET in TO-220FP. Active production, ROHS3 compliant. Quoted to order against BOM — RFQ for current pricing and availability.","metaKeywords":null},"attributes":{"series":"MDmesh™ M2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF12","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"500mOhm @ 4A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"16.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"535 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.9600","priceTiers":[{"qty":1,"price":"$1.96000","currency":"USD"},{"qty":10,"price":"$1.76100","currency":"USD"},{"qty":100,"price":"$1.41520","currency":"USD"},{"qty":500,"price":"$1.16272","currency":"USD"},{"qty":1000,"price":"$1.09690","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/fb42d308a0b3ba58acf860c04cb75647.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF12N65M2/alternatives.json"},"ai":{"faq":[{"question":"Where can I buy STF12N65M2 and get a price?","answer":"The STF12N65M2 is an active part sourced through independent distribution."},{"question":"What is the closest functional alternative to STF12N65M2?","answer":"Within the same MDmesh family, the STF18N65M2 is a higher-current sibling (12 A, 330 mOhm) in the same TO-220FP package and 650 V rating. For a lower-voltage option, the STF12N50DM2 (500 V, 350 mOhm) shares the same pinout and package but has a different gate threshold — verify the drive circuit before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF12N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF12N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}