{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF11NM60ND","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF11NM60ND","canonicalUrl":"https://icboms.com/stmicroelectronics/STF11NM60ND","factsUrl":"https://icboms.com/api/mcp/products/STF11NM60ND","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ II N-Channel MOSFET, STF11NM60ND, 600V Vdss, 10A Id, 450mOhm Rds(on), TO-220 Full Pack, Tube.","salesMarkdown":"## Active production — what it means for the BOM line The STF11NM60ND: ROHS3 compliant — no lead or restricted-substance exemptions to track across date-code lots. ## 600 V, 10 A, 450 mOhm — sizing the conduction and switching loss Rated 600 V drain-to-source (Vdss) and 10 A continuous drain current at 25°C case temperature — this sets the bus-voltage ceiling for offline flyback, PFC boost, or bridge topologies and the load current budget before the junction-temperature derating curve applies. Maximum on-resistance is 450 mOhm at 5 A drain current with 10 V gate drive — the conduction loss at full load is I² × R, so at 5 A the dissipation is about 11.25 W, well within the 25 W package limit at 25°C case. Gate charge totals 30 nC at 10 V, and input capacitance is 850 pF at 50 V drain — these numbers drive the gate-driver sizing: a driver sourcing 1 A charges the gate in roughly 30 ns, but the practical switching speed is also limited by the 850 pF input capacitance and the gate-loop inductance. ## TO-220 Full Pack — isolated tab, no heatsink pad needed The TO-220 Full Pack (TO-220FP) package has the metal tab fully encapsulated in epoxy — the tab is electrically isolated, so no insulating pad or mica washer is needed between the device and the heatsink, though the thermal resistance junction-to-case is higher than a standard TO-220. Through-hole mounting suits point-to-point wiring or PCB layouts where the 2.54 mm pitch lead frame is standard — the three leads are gate, drain, and source, with the drain on the centre pin. Junction temperature range spans -55°C to 150°C, covering industrial motor-drive environments and some under-hood automotive applications where the ambient stays below 125°C. ## FDmesh™ II — fast-recovery body diode for bridge topologies The FDmesh™ II series integrates a fast-recovery body diode — this reduces reverse-recovery charge (Qrr) compared to a standard MOSFET body diode, making it suited for half-bridge, full-bridge, and LLC resonant converters where the diode conducts during dead-time. Gate threshold voltage is 5 V maximum at 250 µA drain current — the 10 V drive voltage for minimum Rds(on) is well above the threshold, ensuring full enhancement across the operating temperature range.","metaTitle":"STMicroelectronics STF11NM60ND N-Channel MOSFET","metaDescription":"STF11NM60ND N-channel 600V 10A MOSFET in TO-220 Full Pack. Active production, ROHS3 compliant. FDmesh™ II fast-recovery diode. Quoted to order.","metaKeywords":null},"attributes":{"series":"FDmesh™ II","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STF11","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"450mOhm @ 5A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"30 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"850 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.2500","priceTiers":[{"qty":1,"price":"$4.25000","currency":"USD"},{"qty":10,"price":"$3.57000","currency":"USD"},{"qty":100,"price":"$2.88840","currency":"USD"},{"qty":500,"price":"$2.56750","currency":"USD"},{"qty":1000,"price":"$2.19842","currency":"USD"},{"qty":2000,"price":"$2.07005","currency":"USD"},{"qty":5000,"price":"$1.98600","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f9b85a0c57da70e0b21e7bca646fb42c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF11NM60ND/alternatives.json"},"ai":{"faq":[{"question":"What is the closest functional alternative to STF11NM60ND?","answer":"The STF11N60M2-EP is a close peer in the same TO-220FP package and 600 V class, but it uses the MDmesh™ M2-EP technology with a higher 595 mOhm Rds(on) at 3.75 A and a lower 12.4 nC gate charge — the trade-off is higher conduction loss for lower switching loss. The STF13N60M2 (MDmesh™ II Plus) offers 380 mOhm at 5.5 A and 17 nC gate charge, which reduces conduction loss at the cost of slightly higher gate drive power. Neither is a drop-in replacement without verifying the gate-drive and thermal margin in the specific application."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF11NM60ND","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF11NM60ND when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}