{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF11N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF11N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STF11N65M5","factsUrl":"https://icboms.com/api/mcp/products/STF11N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF11N65M5, MDmesh™ V N-Channel MOSFET, 650 V Vdss, 9 A Id, 480 mOhm Rds(on) at 10 V, 17 nC Qg, TO-220-3 Full Pack (TO-220FP), through-hole, 150°C junction.","salesMarkdown":"The TO-220FP full-pack package provides electrical isolation between the tab and the heat sink — no insulating pad needed, but the thermal path is through the plastic body, so derate the power dissipation accordingly. At 480 mOhm max at 10 V gate drive, the STF11N65M5 sits in the mid-range for a 650 V 9 A MOSFET — not the lowest Rds(on) in the class, but the 17 nC gate charge is notably light. That combination suits designs where the gate driver is limited in peak current or where switching frequency pushes 100 kHz and above. The input capacitance of 644 pF at 100 V Vds confirms a small Miller plateau, which helps keep switching losses in check. For a flyback primary switch or a PFC boost stage running at 65–100 kHz, the drive burden is low enough that a simple driver IC or even a logic-level gate drive from a controller can handle it. ## TO-220FP full-pack — isolation without a pad, but watch the thermal budget The TO-220FP (full-pack) package has the metal tab fully encapsulated in plastic, so the mounting surface is electrically isolated to the same voltage rating as the die. The 25 W dissipation limit at case temperature is the ceiling — in practice, with the junction rated to 150°C, a heat sink with good airflow is needed to stay below derating at 9 A continuous. The through-hole mounting suits point-to-point wiring on perforated board or traditional PCB layouts where a TO-220 footprint is already established.","metaTitle":"STF11N65M5 N-Channel MOSFET, 650 V, 9 A, TO-220FP","metaDescription":"STF11N65M5 N-channel 650 V 9 A MOSFET in TO-220FP full-pack. 480 mOhm Rds(on) at 10 V, 17 nC gate charge. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STF11","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"480mOhm @ 4.5A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"17 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"644 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"9A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.1500","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/fae2cb6517c6900902bda5a45882812e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF11N65M5/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STF11N65M5?","answer":"This is the value used for conduction loss calculations in the design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF11N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF11N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}