{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF11N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF11N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STF11N65M2","factsUrl":"https://icboms.com/api/mcp/products/STF11N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF11N65M2, MDmesh™ II Plus, N-Channel MOSFET, 650 V Vdss, 7 A Id, 670 mOhm Rds(on) @ 3.5 A, 10 V, 12.5 nC Qg, TO-220-3 Full Pack, -55°C to 150°C.","salesMarkdown":"## 650 V, 7 A — where this MOSFET fits A total gate charge of 12.5 nC at 10 V is low for a 650 V device in this current class, which means the gate driver does not need to supply much energy per switching cycle. This directly reduces driver losses and allows faster turn-on and turn-off transitions — useful when pushing for efficiency in hard-switched topologies like active clamp flyback or two-switch forward converters. The input capacitance of 410 pF at 100 V Vds is also modest, keeping the Miller plateau short and the switching losses contained. The trade-off is higher thermal resistance than a standard TO-220; the 25 W power dissipation limit reflects that. Through-hole mounting suits point-of-load assemblies where mechanical robustness matters.","metaTitle":"STF11N65M2 N-Channel MOSFET, 650 V, 7 A, TO-220FP","metaDescription":"STF11N65M2 N-channel 650 V, 7 A MOSFET in TO-220FP full-pack. 670 mOhm Rds(on), 12.5 nC gate charge, -55 to 150°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF11","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"670mOhm @ 3.5A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"12.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"410 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.8200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/06dce3fca96b7a012050125aed08416b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF11N65M2/alternatives.json"},"ai":{"faq":[{"question":"What package type does the STF11N65M2 use?","answer":"It comes in a TO-220-3 Full Pack (TO-220FP) through-hole package, which has an isolated tab for direct heatsink mounting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF11N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF11N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}