{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF11N60M2-EP","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF11N60M2-EP","canonicalUrl":"https://icboms.com/stmicroelectronics/STF11N60M2-EP","factsUrl":"https://icboms.com/api/mcp/products/STF11N60M2-EP","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M2-EP series, N-Channel MOSFET, 600V Vdss, 7.5A Id at 25°C, 595mOhm Rds(on) at 10V, TO-220-3 Full Pack (TO-220FP), Through Hole, -55°C to 150°C junction temperature.","salesMarkdown":"STF11N60M2-EP gate charge is 12.4 nC at 10 V, keeping drive requirements modest for a 600 V device. Input capacitance is 390 pF at 100 V drain-source. That saves assembly time and removes one thermal interface from the path. The junction-to-case thermal resistance is baked into the 25 W power dissipation limit at the case. The base product number is STF11, which covers the 600 V die in the TO-220FP package. The -EP suffix indicates the enhanced-performance variant within the M2-EP generation. ## Junction temperature range and the field environment The 150°C max junction gives headroom for overload transients, but the 25 W dissipation limit at the case means the heatsink design is the real constraint — derate above 25°C case per the datasheet curve. The gate is rated to ±25 V absolute maximum, which gives margin against ringing in a hard-switched topology — but keep the drive voltage at 10 V to stay inside the safe operating area.","metaTitle":"STF11N60M2-EP MOSFET, N-Ch 600V 7.5A TO-220FP","metaDescription":"STMicroelectronics STF11N60M2-EP N-channel 600V 7.5A MOSFET in TO-220FP. Rds(on) 595mOhm at 10V. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"MDmesh™ M2-EP","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2-EP","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Base Product Number":"STF11","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"595mOhm @ 3.75A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"12.4 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"390 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7000","priceTiers":[{"qty":1,"price":"$1.70000","currency":"USD"},{"qty":10,"price":"$1.41300","currency":"USD"},{"qty":100,"price":"$1.12500","currency":"USD"},{"qty":500,"price":"$0.95190","currency":"USD"},{"qty":1000,"price":"$0.80768","currency":"USD"},{"qty":2000,"price":"$0.76730","currency":"USD"},{"qty":5000,"price":"$0.73845","currency":"USD"},{"qty":10000,"price":"$0.71400","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8dd6011d8311578c3ec5c0b65d79d3bd.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF11N60M2-EP/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STF11N60M2-EP at 10V?","answer":"That is the worst-case figure at 25°C junction temperature — actual Rds(on) will be lower in the typical part, and it rises with junction temperature per the normalised curve in the datasheet."},{"question":"What is the equivalent or replacement for STF11N60M2-EP?","answer":"No official pin-compatible replacement or second-source cross-reference is listed for this exact -EP suffix variant. The base MDmesh M2 series includes other 600 V, 7.5 A TO-220FP parts with slightly different Rds(on) and gate charge — but those are not drop-in equivalents without checking the parametric trade-offs. For dual-sourcing, compare the Rds(on) and Qg specs against the M2-EP values."},{"question":"Does STF11N60M2-EP require a heatsink?","answer":"At 7.5 A continuous drain current and 595 mOhm Rds(on), conduction losses alone exceed 30 W — well above the 25 W maximum power dissipation at the case. So yes, in any practical continuous-load application it needs a heatsink. The TO-220FP's isolated tab lets you bolt it directly to the heatsink without an insulating pad."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF11N60M2-EP","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF11N60M2-EP when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}