{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF11N52K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF11N52K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STF11N52K3","factsUrl":"https://icboms.com/api/mcp/products/STF11N52K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH3™ series, N-Channel MOSFET, 525 V drain-source voltage, 10 A continuous drain current, 510 mOhm Rds(on) at 10 V gate drive, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 525 V N-Channel MOSFET in a fully isolated TO-220FP The STF11N52K3 is marked obsolete by STMicroelectronics. Expect to work with a replacement qualification if you are sustaining a production board. The drive voltage for achieving the rated on-resistance is 10 V (max Rds(on) condition). The threshold voltage maximum is 4.5 V at 50 µA. ## Thermal and package considerations for the TO-220FP The TO-220 Full Pack case (TO-220FP) is a fully molded, isolated package. The maximum power dissipation is 30 W at case temperature. The through-hole mounting is straightforward for rework.","metaTitle":"STF11N52K3 N-Channel MOSFET, 525V, 10A, TO-220FP, Obsolete","metaDescription":"STF11N52K3 N-Channel MOSFET from STMicroelectronics SuperMESH3 series. 525V Vdss, 10A Id, 510mOhm Rds(on) at 10V. TO-220FP Full Pack. Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH3™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STF11","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"510mOhm @ 5A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"51 nC @ 10 V","Drain to Source Voltage (Vdss)":"525 V","Input Capacitance (Ciss) (Max) @ Vds":"1400 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/f3a9d7667125dc772f8090033da5e836.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF11N52K3/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STF11N52K3?","answer":"STMicroelectronics has not listed an official direct replacement in the lifecycle record. Within the SuperMESH3™ family, there are TO-220FP-packaged N-channel MOSFETs with similar or higher voltage and current ratings that may serve as functional substitutes — for example, parts with 600 V or 650 V Vdss and comparable Rds(on). Verify gate charge, threshold voltage, and switching characteristics against your design before substituting."},{"question":"What is the Rds(on) of STF11N52K3?","answer":"The specified drive voltage for achieving that Rds(on) is 10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF11N52K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF11N52K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}