{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STF10N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STF10N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STF10N60M2","factsUrl":"https://icboms.com/api/mcp/products/STF10N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STF10N60M2, MDmesh™ II Plus N-Channel MOSFET, 600 V Vdss, 7.5 A continuous drain, 600 mOhm max Rds(on) at 10 V, TO-220FP through-hole package, -55 to 150 °C operating temperature.","salesMarkdown":"## 600 V, 0.55 Ohm typ. — the full-pack SMPS switch The STF10N60M2: It is packaged in a TO-220FP full-pack, which provides electrical isolation between the tab and the heatsink — no insulating pad or washer is needed, saving assembly time and reducing thermal interface resistance. The 600 V rating and the low gate charge (13.5 nC at 10 V) make it a natural fit for single-switch forward converters, flyback supplies, and PFC boost stages in the 100–300 W range. ## Gate charge and input capacitance — sizing the driver With a maximum gate charge of 13.5 nC at 10 V and an input capacitance of 400 pF at 100 V drain bias, the STF10N60M2 presents a light load to the gate driver. A small driver IC or a gate-drive transformer with modest current capability can switch it at frequencies where a larger die would require a second driver stage. The gate threshold voltage is specified at 4 V max with 250 µA drain current, so a 10 V drive (the recommended Vgs for minimum Rds(on)) leaves adequate headroom above the threshold across the full operating temperature range of -55 to 150 °C junction. ROHS3 compliant.","metaTitle":"STF10N60M2 N-Channel MOSFET, 600 V, 0.55 Ohm typ., TO-220FP","metaDescription":"STF10N60M2 N-channel 600 V MOSFET, 0.55 Ohm typ. Rds(on), 7.5 A continuous drain, TO-220FP full-pack.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STF10","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 4A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"13.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"400 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6200","priceTiers":[{"qty":1,"price":"$1.60000","currency":"USD"},{"qty":10,"price":"$1.43500","currency":"USD"},{"qty":100,"price":"$1.15310","currency":"USD"},{"qty":500,"price":"$0.94734","currency":"USD"},{"qty":1000,"price":"$0.89372","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/24ff7d7751b0d0104ee09cece0ce19ee.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STF10N60M2/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STF10N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STF10N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}