{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STE145N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STE145N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STE145N65M5","factsUrl":"https://icboms.com/api/mcp/products/STE145N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ V N-Channel MOSFET, STE145N65M5, 650 V Vdss, 143 A Id, 15 mOhm Rds(on) at 10 V, 414 nC Qg, ISOTOP chassis-mount package.","salesMarkdown":"## Bolting it down — ISOTOP chassis-mount reality The STE145N65M5: The mounting method is chassis mount, not PCB solder; the buyer and layout engineer need to plan for a thermal interface material and a screw-torque spec, not a reflow profile. ## 650 V, 143 A, 15 mOhm — what the headline ratings mean for the power stage The 15 mOhm maximum on-resistance at Vgs = 10 V and 69 A is the conduction-loss floor; at full current the dissipation in the die alone, before switching losses, is over 300 W, which is why the 679 W power dissipation rating at the case and the ISOTOP's thermal path to a heatsink are non-negotiable. ## Gate charge — sizing the driver The 414 nC total gate charge at Vgs = 10 V sets the gate-driver current requirement. At a 50 kHz switching frequency, the average gate-drive current is 414 nC × 50 kHz = 20.7 mA; at 100 kHz it doubles to 41.4 mA. The peak current capability of the driver must also handle the charging of the 18500 pF input capacitance at the switching edge — a standard 2 A or 4 A gate-driver IC is adequate, but a weak logic-output driver will stretch the switching times and increase cross-conduction losses.","metaTitle":"STMicroelectronics STE145N65M5 N-Channel MOSFET","metaDescription":"STMicroelectronics STE145N65M5 MDmesh V N-channel MOSFET, 650V Vdss, 143A Id, 15mOhm Rds(on). ISOTOP chassis-mount. Active lifecycle, ROHS3.","metaKeywords":null},"attributes":{"series":"MDmesh™ V","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Chassis Mount","Package / Case":"ISOTOP","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"15mOhm @ 69A, 10V","Power Dissipation (Max)":"679W (Tc)","Supplier Device Package":"ISOTOP®","Gate Charge (Qg) (Max) @ Vgs":"414 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"18500 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"143A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$53.62","priceTiers":[{"qty":1,"price":"$53.62000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/14b48ce1f1f84b69d82fea716a067805.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STE145N65M5/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STE145N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STE145N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}