{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STDLED625","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STDLED625","canonicalUrl":"https://icboms.com/stmicroelectronics/STDLED625","factsUrl":"https://icboms.com/api/mcp/products/STDLED625","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STDLED625 N-Channel MOSFET, 620 V Vdss, 5 A Id, 1.6 Ohm Rds(on) at 10 V, TO-252-3 DPAK, Surface Mount, Tape & Reel.","salesMarkdown":"This is a high-voltage switching device built on standard MOSFET (Metal Oxide) technology, intended for applications where the primary design constraint is blocking voltage rather than ultra-low on-resistance. The 620 V Vdss puts it squarely in the offline power supply and LED lighting driver space, where the rectified mains rail (typically 310 V to 400 V DC) needs a switch with comfortable derating margin. The 5 A continuous rating at the case means the actual usable current in a real PCB layout will be lower — the 70 W maximum power dissipation (Tc) is the real thermal ceiling, and the DPAK's tab must be soldered to a sufficient copper area or heatsink to pull that heat out. ## On-resistance and gate drive — sizing the gate driver and estimating conduction loss The STDLED625 specifies a maximum Rds(on) of 1.6 Ohm at 2.1 A drain current with 10 V gate drive. The gate threshold voltage (Vgs(th)) has a maximum of 4.5 V at 50 µA, which means the device begins to turn on around 3-4 V, but the channel resistance stays high until the gate is driven to the full 10 V. For a BOM engineer, this means the gate driver circuit needs to supply at least 10 V, typically from a bootstrap or charge-pump stage in a half-bridge, or from a dedicated 10-12 V rail in a single-ended flyback or buck converter. ## Package and thermal reality — the DPAK tab is your heatsink The STDLED625 comes in the TO-252-3 DPAK (DPak, 2 Leads + Tab, SC-63) surface-mount package, supplied on Tape & Reel. This is a standard power package where the center tab is the drain connection and the primary thermal path. The 70 W maximum power dissipation at case temperature assumes the tab is held at 25°C — in practice, the junction-to-ambient thermal resistance of a DPAK on a standard FR4 board with minimal copper is around 60-80 °C/W, limiting dissipation to 1-2 W without a heatsink. For the full 5 A rating, the tab needs to be soldered to a large copper pour on the PCB, or bolted to an external heatsink through the tab hole.","metaTitle":"STMicroelectronics STDLED625 N-Channel MOSFET, 620V 5A DPAK","metaDescription":"STMicroelectronics STDLED625 N-Channel MOSFET in DPAK. 620V Vdss, 5A Id, 1.6 Ohm Rds(on) at 10V. Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"-","Package":"Tape & Reel (TR)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STDLED625","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"1.6Ohm @ 2.1A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"35 nC @ 10 V","Drain to Source Voltage (Vdss)":"620 V","Input Capacitance (Ciss) (Max) @ Vds":"890 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/27be7476d7b63361718a6bc6fe35be83.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STDLED625/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STDLED625?","answer":"This on-resistance is specified at 10 V gate drive, so the part requires a gate driver capable of supplying at least 10 V to achieve the rated performance."},{"question":"What is the Vgs threshold of STDLED625?","answer":"The maximum gate threshold voltage (Vgs(th)) is 4.5 V at 50 µA drain current. This means the device begins to conduct at around 3-4 V gate-to-source, but full enhancement requires the recommended 10 V gate drive to minimize on-resistance."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STDLED625","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STDLED625 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}