{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD9NM60N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD9NM60N","canonicalUrl":"https://icboms.com/stmicroelectronics/STD9NM60N","factsUrl":"https://icboms.com/api/mcp/products/STD9NM60N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II series, N-Channel MOSFET, 600 Vdss, 6.5 A continuous drain (Tc), 745 mΩ Rds(on) at 10 V, DPAK surface-mount package, 70 W power dissipation, active lifecycle.","salesMarkdown":"## 600 V super-junction MOSFET in DPAK – the switching-stage workhorse The STD9NM60N: The DPAK (TO-252) surface-mount package is used for this N-Channel MOSFET. ## Package and temperature — DPAK assembly and 150 °C junction rating The DPAK (TO-252) is a surface-mount package with a large exposed tab for thermal conduction.","metaTitle":"STD9NM60N N-Channel MOSFET, 600 V, 6.5 A, DPAK","metaDescription":"STD9NM60N N-Channel MOSFET from STMicroelectronics MDmesh™ II series. 600 Vdss, 6.5 A continuous drain, 745 mΩ Rds(on) at 10 V. DPAK surface-mount package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD9NM60","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"745mOhm @ 3.25A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"17.4 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"452 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"6.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.5000","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/af80afc6c5dc1b14c29f0ca25925de6e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD9NM60N/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STD9NM60N at 10 V?","answer":"The maximum Rds(on) is 745 mΩ at 10 V gate drive with a drain current of 3.25 A."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD9NM60N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD9NM60N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}