{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD9NM50N-1","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD9NM50N-1","canonicalUrl":"https://icboms.com/stmicroelectronics/STD9NM50N-1","factsUrl":"https://icboms.com/api/mcp/products/STD9NM50N-1","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD9NM50N-1, MDmesh™ N-Channel MOSFET, 500 Vdss, 5 A continuous drain, 560 mOhm Rds(on) at 10 V, 20 nC gate charge, TO-251 I-PAK through-hole package.","salesMarkdown":"## 500 V MDmesh™ N-channel in a TO-251 I-PAK The 20 nC typical gate charge at 10 V keeps gate-drive energy modest, suiting it for hard-switched topologies in the 50–150 kHz range where the 570 pF input capacitance at 50 V Vds doesn't load the driver excessively. Packaged in a TO-251 I-PAK (short-lead through-hole), it's a common fit for offline flyback converters, PFC stages, and low-power motor drives where board space is tight but a heatsink tab is available. ## Obsolete — plan for last-time-buy or alternate At 3.7 A continuous, conduction loss alone is about 7.7 W; at the 5 A absolute maximum, it reaches 14 W. The 70 W package power dissipation limit at Tc = 25°C gives thermal headroom, but real-world junction temperatures at 5 A require a substantial heatsink or forced air. The 4 V maximum gate threshold at 250 µA means the device is fully enhanced with a standard 10 V gate drive — logic-level 5 V drive may not saturate it fully, so check the Rds(on) curve if the driver rail is below 10 V. ## Through-hole I-PAK — board integration note The TO-251 I-PAK (IPAK) is a short-lead through-hole package with the tab as the drain connection. The 150°C maximum junction temperature sets the derating line: at 70°C ambient, the allowable dissipation drops to roughly half the 25°C figure.","metaTitle":"STD9NM50N-1 N-Channel MOSFET, 500 V, 5 A, MDmesh™, TO-251","metaDescription":"STD9NM50N-1 N-Channel MOSFET, 500 Vdss, 5 A continuous drain, 560 mOhm Rds(on) at 10 V. MDmesh™ technology, TO-251 I-PAK.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"560mOhm @ 3.7A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"I-PAK","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"570 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b076c7d4649db7ef96df1f0c82fce32a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD9NM50N-1/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STD9NM50N-1?","answer":"This is the spec to use for worst-case conduction loss calculations in the power stage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD9NM50N-1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD9NM50N-1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}