{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD9N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD9N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STD9N65M2","factsUrl":"https://icboms.com/api/mcp/products/STD9N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™, STD9N65M2, N-Channel MOSFET, 650V Vdss, 5A Id, 900mOhm Rds(on), 10nC Qg, DPAK (TO-252), 150°C Tj, ROHS3.","salesMarkdown":"## 650 V N-channel for offline flyback and PFC stages The STD9N65M2: This N-channel MOSFET is rated for 650 V drain-source and 5 A continuous drain current. ## Gate charge and switching behaviour A 5 V gate signal leaves the channel partially enhanced and the on-resistance significantly higher than the datasheet maximum. ## DPAK thermal and footprint considerations The TO-252 (DPAK) package with exposed drain tab requires a copper landing pad on the PCB — the tab is the primary heat path. Surface-mount assembly with standard reflow profile; the tab solder joint carries no current but must be void-free for thermal transfer.","metaTitle":"STD9N65M2 MOSFET N-Ch 650V 5A DPAK MDmesh™","metaDescription":"STD9N65M2 N-channel 650V 5A MOSFET in DPAK. 900mOhm Rds(on) at 10V, 10nC gate charge. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"MDmesh™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD9","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"900mOhm @ 2.5A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"10 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"315 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5700","priceTiers":[{"qty":1,"price":"$1.57000","currency":"USD"},{"qty":10,"price":"$1.30600","currency":"USD"},{"qty":100,"price":"$1.03910","currency":"USD"},{"qty":500,"price":"$0.87924","currency":"USD"},{"qty":1000,"price":"$0.74603","currency":"USD"},{"qty":2500,"price":"$0.70872","currency":"USD"},{"qty":5000,"price":"$0.68208","currency":"USD"},{"qty":12500,"price":"$0.65950","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/80039d9caeaf1d992bff49865baf9ed5.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD9N65M2/alternatives.json"},"ai":{"faq":[{"question":"Is STD9N65M2 a logic-level MOSFET?","answer":"No — the maximum gate threshold is 4 V at 250 µA, and the drive voltage for rated Rds(on) is 10 V. This is a standard-threshold device; a 5 V gate drive will not fully enhance the channel."},{"question":"What is the Rds(on) and gate charge of STD9N65M2?","answer":"Maximum on-resistance is 900 mOhm at 2.5 A drain current with 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD9N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD9N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}